Determination of deep electron traps in GaAs by time-resolved capacitance measurement
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and devices · Molecular Junctions and Nanostructures · Electron and X-Ray Spectroscopy Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
Show source-provided references
1. R.K.Willardson, A.C.Beer (Ed.):Semiconductors and Semimetals Vol. 7 (Academic Press, New York 1971)
2. R.L.VanTuyl, C.A.Liechti: IEEE Trans. SC-9, 269 (1974)
3. T.Sugeta, M.Tanimoto, T.Ikoma, H.Yanai: IEEE Trans. ED-21, 504 (1974)10.1109/T-ED.1974.17956 ↗
4. K.Matsuno: Appl. Phys. Lett.12, 404 (1968)10.1063/1.1651875 ↗
5. D.Sodini, A.Touboul, G.Lecoy, M.Savelli: Electron. Lett.12, 42 (1976)10.1049/el:19760033 ↗
6. P.L.Hower, W.W.Hooper, D.A.Tremere, W.Lehrer, C.A.Bittmann:Proc. 2nd Int. Symp. GaAs,Dalas 1968 (Inst. of Physics, London 1969) p. 187
7. O.Wada, S.Yanagisawa, H.Takanaski: Japan. J. Appl. Phys.15, 1151 (1976)10.1143/JJAP.15.1151 ↗
8. A.Mircea, A.Mitonneau: Appl. Phys.8, 15 (1975)10.1007/BF00883664 ↗
9. D.V.Lang, A.Y.Cho, A.C.Gossard, M.Ilegems, W.Wiegmann: J. Appl. Phys.47, 2558 (1976)10.1063/1.322974 ↗
10. H.Okamoto, S.Sakata, K.Sakai: J. Appl. Phys.44, 1316 (1973)10.1063/1.1662347 ↗
11. F.Hasegawa, A.Majerfeld: Electron. Lett.11, 286 (1975)10.1049/el:19750217 ↗
12. K.Sakai, T.Ikoma: Appl. Phys.5, 165 (1974)10.1007/BF00928230 ↗
13. D.Bois, M.Boulou: Phys. Stat. Sol. (a)22, 671 (1974)10.1002/pssa.2210220234 ↗
14. T.Okumura, S.Ikoma: Appl. Phys. Lett.10, 572 (1974)10.1063/1.1655315 ↗
15. G.Goto, S.Yanagisawa, O.Wada, H.Takanashi: Appl. Phys. Lett.23, 150 (1973)10.1063/1.1654839 ↗
16. R.R.Senechal, J.Basinski: J. Appl. Phys.39, 4581 (1968)10.1063/1.1655804 ↗
17. D.V.Lang: J. Appl. Phys.45, 3023 (1974)10.1063/1.1663719 ↗
18. M.Ihara, K.Dazai, O.Ryuzan: J. Appl. Phys.45, 528 (1974)10.1063/1.1663277 ↗
19. G.Goto, S.Yanagisawa, O.Wada, H.Takanashi: Japan. J. Appl. Phys.13, 1127 (1974)10.1143/JJAP.13.1127 ↗
20. J.A.Pals: Solid-State Electron.17, 1139 (1974)10.1016/0038-1101(74)90157-9 ↗
21. A.Shibatomi, N.Yokoyama, H.Ishikawa, K.Dazai, O.Ryusan: J. Crystal Growth31, 240 (1975)10.1016/0022-0248(75)90136-0 ↗
22. J.Blanc, R.H.Bube, L.R.Weisberg: J. Phys. Chem. Solids25, 225 (1964)10.1016/0022-3697(64)90083-6 ↗
23. R.W.Haisty, E.W.Mehal, R.Stratton: J. Phys. Chem. Sol.23, 829 (1962)10.1016/0022-3697(62)90140-3 ↗
24. G.P.Peka, L.G.Shepel, L.Z.Mirets: Sov. Phys. Semicond.7, 1439 (1974)
25. Y.Tokumaru: Japan. J. Appl. Phys.9, 95 (1970)10.1143/JJAP.9.95 ↗
26. H.G.Grimmeiss, L-Å.Ledebo: J. Appl. Phys.46, 2155 (1975)10.1063/1.321858 ↗