journal article·1990-04

Rapid thermal process-induced recombination centers in ion implanted silicon

W. Eichhammer, M. Hage-Ali, R. Stuck, P. Siffert

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (13)

Show source-provided references
1. W. Eichhammer, Vu-Thuong-Quat, P. Siffert: J. Appl. Phys. 66, 3857 (1989)10.1063/1.344050 ↗
2. Vu-Thuong-Quat, W. Eichhammer, P. Siffert: Appl. Phys. Lett. 53, 1928 (1988)10.1063/1.100348 ↗
3. Vu-Thuong-Quat, W. Eichhammer, P. Siffert: Appl. Phys. Lett. 54, 1235 (1989)10.1063/1.100726 ↗
4. J.R. Davis Jr., A. Rohatgi, R.H. Hopkins, P.D. Blais, P. Rai-Choudhury, J.R. McCormick, H.C. Mollenkopf: IEEE Trans. ED-27, 677 (1980)
5. Y. Tokuda, N. Kobayashi, A. Usami, Y. Inoue, M. Imura: J. Appl. Phys. 66, 3651 (1989)10.1063/1.344076 ↗
6. 1978 Annual Book of ASTM Standards, part 43 (Electronics) (American Society for Testing and Materials, Philadelphia 1979) p. 770
7. E.R. Weber: Appl. Phys. A 30, 1 (1983)10.1007/BF00617708 ↗
8. D.R. Sparks, R.G. Chapman: J. Electrochem. Soc. 133, 1201 (1986)10.1149/1.2108819 ↗
9. K.S. Jones, S. Prussin, E.R. Weber: Appl. Phys. A 45, 1 (1988)10.1007/BF00618760 ↗
10. H. Glawischnig: Ion Implantation Techniques, ed. by H. Ryssel, H. Glawischnig (Springer, Berlin, Heidelberg 1982) p. 17
11. L. Jastrzebski: European Material Research Society Meeting May 1989, Strasbourg (France) Paper B.V.1
12. A.J. Armini: Computer Code PROFILE, Surface Alloys Corporation
13. J.C. Muller, A. Grob, J.J. Grob, R. Stuck, P. Siffert: In 13th IEEE Photovolt. Specialists Conf. Proceedings (IEEE, New York 1978) p. 711