Concentration dependence of the solid-phase epitaxial growth rate in Te implanted Si
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (8)
Show source-provided references
1. L. Csepregi, J.W. Mayer, T.W. Sigmon: Phys. Lett. A54, 157 (1975)10.1016/0375-9601(75)90847-6 ↗
2. L. Csepregi, J.W. Layer, T.W. Sigmon: Appl. Phys. Lett.29, 92 (1976)10.1063/1.88980 ↗
3. L. Csepregi, E.F. Kennedy, T.J. Gallagher, J.W. Mayer, T.W. Sigmon: J. Appl. Phys.48, 4234 (1977)10.1063/1.323408 ↗
4. E.F. Kennedy, L. Csepregi, J.W. Mayer, T.W. Sigmon: J. Appl. Phys.48, 4241 (1977)10.1063/1.323409 ↗
5. S.U. Campisano, E. Rimini, P. Baeri, G. Foti: Appl. Phys. Lett.37, 170 (1980)10.1063/1.91812 ↗
6. S.U. Campisano, G. Foti, P. Baeri, M.G. Grimaldi, E. Rimini: Appl. Phys. Lett.37, 719 (1980)10.1063/1.92057 ↗
7. F. A. Trumbore: Bell System Tech. J.39, 205 (1960)10.1002/j.1538-7305.1960.tb03928.x ↗
8. D.L. Kendall, D.B. De Vries.Semiconductor Silicon, ed. by R. R. Haberecht and E.L. Kerr (The Electrochemical Society 1969) p. 35810.1016/B978-0-08-006511-3.50004-0 ↗