Spatial distribution of impurities in delta-doped n-type GaAs
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (14)
Show source-provided references
1. C.E.C. Wood, G.M. Metzi, J.D. Berry, L.F. Eastman: J. Appl. Phys.51, 383 (1980)10.1063/1.327383 ↗
2. E.F. Schubert, K. Ploog: Jpn. J. Appl. Phys. Lett.24, L608 (1985)10.1143/JJAP.24.L608 ↗
3. E.F. Schubert, J.E. Cunningham, W.T. Tsang: Solid State Commun.63, 591 (1987)10.1016/0038-1098(87)90859-3 ↗
4. E.F. Schubert, J.E. Cunningham, W.T. Tsang, G.L. Timp: Appl. Phys. Lett.51, 1170 (1987)10.1063/1.98722 ↗
5. T. Ishikawa, K. Ogasawara, T. Nakamusa, S. Kuroda, K. Kondo: J. Appl. Phys.61, 1937 (1987)10.1063/1.338041 ↗
6. E.F. Schubert, A. Fischer, Y. Horikoshi, K. Ploog: Appl. Phys. Lett.47, 219 (1985)10.1063/1.96223 ↗
7. E.F. Schubert, A. Fischer, K. Ploog: Electron. Lett.21, 411 (1985)10.1049/el:19850292 ↗
8. H. Kroemer, W.-Y. Chien, J.S. Harris, Jr., D.D. Edwall: Appl. Phys. Lett.36, 295 (1980)10.1063/1.91467 ↗
9. E.F. Schubert, K. Ploog: Jpn. Appl. Phys.25, 966 (1986)10.1143/JJAP.25.966 ↗
10. H. Lee, W.J. Schaff, G.W. Wicks, L.F. Eastman, A.R. Calawa: Inst. Phys. Conf. Ser.74, 321 (1985)
11. A. Zrenner, F. Koch, K. Ploog: Proceedings of the Seventh International Conference on Electronic Properties of Two-Dimensional Systems, Santa Fe (1987); to be published in Surface Science (1988)
12. J.E. Cunningham: Unpublished
13. Many-body effects are not significant for high concentrations, because the average kinetic energy exceeds the average interaction energy. See: T. Ando, A.B. Fowler, F. Stern: Rev. Mod. Phys.54, 437 (1982)10.1103/RevModPhys.54.437 ↗
14. Even narrower CV profiles can be obtained with a p-type background concentration, due to a stronger localization of carriers in an inversion layer as compared to an accumulation layer. See also N. Kobayashi, T. Makinoto and Y. Horikoshi: Jpn. J. Appl. Phys.25, L746 (1986)10.1143/JJAP.25.L746 ↗