journal article·1982-04

Deep levels related to transition metals in Si under hydrostatic pressure

K. W�nstel, O. Kumagai, P. Wagner, W. Jantsch

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and interfaces · Semiconductor Quantum Structures and Devices · Semiconductor materials and devices

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References (25)

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1. M. Jaros: Adv. Phys.29, 409 (1980)10.1080/00018738000101396 ↗
2. S.T. Pantelides: Rev. Mod. Phys.50, 797 (1980)10.1103/RevModPhys.50.797 ↗
3. P. Vogl: InFestkörperprobleme, Vol. XXI, ed. by J. Treusch (Vieweg, Wiesbaden 1981) p. 19110.1007/BFb0108605 ↗
4. J.W. Chen, A.G. Milnes: Annu. Rev. Mater. Sci.10, 157 (1980)10.1146/annurev.ms.10.080180.001105 ↗
5. G.W. Ludwig, H.H. Woodbury: InSolid State Physics, Vol. 13 (Academic Press, New York 1962)
6. W. Paul, D.M. Warschauer:Solids under Pressure (McGraw-Hill, New York 1963)
7. D.L. Camphausen, H.M. James, R.J. Sladek: Phys. Rev. B2, 1899 (1970)10.1103/PhysRevB.2.1899 ↗
8. W. Jantsch, K. Wünstel, O. Kumagai, P. Vogl: To be published
9. M.G. Holland, W. Paul: Phys. Rev.128, 30 (1962)10.1103/PhysRev.128.30 ↗
10. O. Kumagai, K. Wünstel, W. Jantsch: Sol. Stat. Commun. (1982) (in press)
11. K. Wünstel, P. Wagner: To be published
12. K. Graff, H. Pieper: InSemiconductor Silicon 1981, ed. by H.R. Huff and R.J. Kriegler (Electrochem. Soc., Pennington 1981) p. 331
13. G.L. Miller, D.V. Lang, L.C. Kimerling: Annu. Rev. Mater. Sci.1977, 37710.1146/annurev.ms.07.080177.002113 ↗
14. L.C. Kimerling, J.L. Benton, J.J. Rubin: InDefects and Radiation Effects in Semiconductors 1981 (Institute of Physics, London 1981)
15. H. Lemke: Phys. Stat. Sol. (a)64, 215 (1981)10.1002/pssa.2210640123 ↗
16. H. Lemke: Phys. Stat. Sol. (a)64, 549 (1981)10.1002/pssa.2210640219 ↗
17. E. Ohta, M. Sakata: Solid State Electron.23, 759 (1980)10.1016/0038-1101(80)90134-3 ↗
18. J.W. Chen, A.G. Milnes, A. Rohatgi: Solid State Electron.22, 801 (1979)10.1016/0038-1101(79)90130-8 ↗
19. A.M. Salama, L.H. Cheng: J. Electrochem. Soc.126, 1164 (1980)10.1149/1.2129839 ↗
20. R.H. Wallis, A. Zylbersztejn, J.M. Besson: Appl. Phys. Lett.38, 698 (1981)10.1063/1.92483 ↗
21. D. Hochheimer: Ph. D. Thesis, Universität Regensburg (1973) (unpublished)
22. A. Zylbersztejn: Appl. Phys. Lett.33, 200 (1978)10.1063/1.90274 ↗
23. G.G. DeLeo, G.D. Watkins, W.B. Fowler: Phys. Rev. B23, 1851 (1981)10.1103/PhysRevB.23.1851 ↗
24. F.D.M. Haldane, P.W. Anderson: Phys. Rev. B13, 2553 (1976)10.1103/PhysRevB.13.2553 ↗
25. G.W. Ludwig, H.H. Woodbury: InProc. Intern. Conf. on Semiconductor Physics, Prague (1960) p. 596