journal article·1980-05

Trap-centers of self-interstitials in silicon

H. Lefèvre

Applied Physics· Volume 22· Issue 1
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Abstract

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Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and interfaces

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References (32)

Show source-provided references
1. A. Seeger, W. Frank, U. Gösele: Inst. Phys. Conf. Ser.46, 148 (1979)
2. J.A. van Vechten: Phys. Rev. B17, 3197 (1978)10.1103/PhysRevB.17.3197 ↗
3. H. Föll, U. Gösele, B. O. Kolbesen: J. Crystal Growth40, 90 (1977)10.1016/0022-0248(77)90034-3 ↗
4. D.V. Lang: J. Appl. Phys.45, 3014, 3023 (1974)10.1063/1.1663718 ↗
5. H. Lefèvre, M. Schulz: Appl. Phys.12, 45 (1977)10.1007/BF00900067 ↗
6. E. Sirtl, A. Adler: Z. Metallkd.52, 529 (1961)
7. L.I. Bernewitz, K.R. Mayer: Phys. Stat. Sol. (a)16, 579 (1973)10.1002/pssa.2210160228 ↗
8. P.J. Roksnoer, W.J. Bartels, C.W. Bulle: J. Cryst. Growth35, 245 (1976)10.1016/0022-0248(76)90179-2 ↗
9. N.I. Meyer, T. Guldbrandsen: Proc. IEEE51, 1631 (1963)10.1109/PROC.1963.2638 ↗
10. A.J.R. de Kock: Philips Res. Rept. Suppl. No. 1 (1973); andFestkörperprobleme, Vol. XVI, p. 179, ed. by J. Treusch (Vieweg, Braunschweig, 1976); andSemiconductor Silicon 77, (Electrochemical Society, 1977) p. 508
11. L.C. Kimerling, P. Blood, W.M. Gibson: Inst. Phys. Conf. Ser.46, 273 (1979)
12. U. Gösele, H. Strunk: Appl. Phys.20, 265 (1979)10.1007/BF00894994 ↗
13. D.M. Maher, A. Staudinger, G.R. Patel: J. Appl. Phys.47, 3813 (1976)10.1063/1.323241 ↗
14. L.I. Bernewitz, B.O. Kolbesen, K.R. Mayer, G.E. Schuh: Appl. Phys. Lett.25, 277 (1975)10.1063/1.1655471 ↗
15. A. Seeger, H. Föll, W. Frank: In Radiation Effects in Semiconductors, Inst. Phys. Conf. Ser.31, 12 (1976)10.1080/00337577608234775 ↗
16. K.M. Kim: J. Appl. Phys.50, 1135 (1979)10.1063/1.326051 ↗
17. G.D. Watkins, J.R. Troxell, A.P. Chatterjee: Inst. Phys. Conf. Ser.46, 16 (1979)
18. N.M. Johnson, R.B. Gold, J.F. Gibbons: Appl. Phys. Lett.34, 704 (1979); N.M. Johnson, R.B. Gold, A. Lietoila, J.F. Gibbons: Mat. Research Soc. Symp. on Laser-Solid Interactions and Laser Processing, AIP Conf. proc. ser. Boston (1978)10.1063/1.90612 ↗
19. N.M. Johnson, D.J. Bartelink, R.B. Gold, J.F. Gibbons: J. Appl. Phys.50, 4828 (1979)10.1063/1.326546 ↗
20. H. Lefèvre, M. Schulz: Appl. Phys.18, 35 (1979)10.1007/BF00935901 ↗
21. R. Laithwaite, R.C. Newman, D.H.J. Totterdell: J. Phys. C. (Solid State Phys.)8, 236 (1975)10.1088/0022-3719/8/2/016 ↗
22. Y.H. Lee, J.W. Corbett, K.L. Brower: Phys. Stat. Sol. (a)41, 637 (1977)10.1002/pssa.2210410237 ↗
23. C.E. Barnes: J. Electron. Mater.8, 437 (1979)10.1007/BF02652398 ↗
24. W. Frank, U. Gösele, A. Seeger: Inst. Phys. Conf. Ser.46, 514 (1979)
25. M.J. Hill, M. Lietz, R. Sittig, W. Frank, U. Gösele, A. Seeger: Conf. on Radiat Damage in Semicond., Tiflis (1979)
26. K. Hofmann, H. Lefèvre, M. Schulz: ESSDERC, München (1979) (to be published)
27. N.M. Johnson, O.J. Bartelink, M. Schulz: Proc. Int. Topical Conf. on the Phys. of SiO2 and its Interfaces, New York (1978)
28. M. Schulz, E. Klausmann: Appl. Phys.18, 169 (1979)10.1007/BF00934412 ↗
29. L.C. Kimerling, J.R. Patel: Appl. Phys. Lett.34, 73 (1979)10.1063/1.90563 ↗
30. J.R. Patel, L.R. Testardi, P.E. Freeland: Phys. Rev. B13, 3548 (1976)10.1103/PhysRevB.13.3548 ↗
31. V.A. Grazhulis, V.V. Kveder, V.Yu. Mukhina: Phys. Stat. Sol.43, 407 (1977)10.1002/pssa.2210430206 ↗
32. V.A. Grazhulis, V.V. Kveder, V.Yu. Mukhina: Phys. Stat. Sol.44, 107 (1977)10.1002/pssa.2210440111 ↗