Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxy
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OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Advanced Semiconductor Detectors and Materials
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References (8)
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2. M.Ilegems: J. Appl. Phys.48, 1278 (1977)10.1063/1.323772 ↗
3. K.Ploog, A.Fischer: Appl. Phys.13, 111 (1977)10.1007/BF00882468 ↗
4. D.P.Kennedy, P.C.Murley, W.Kleinfelder: IBM J. Res. Dev.12, 399 (1968)10.1147/rd.125.0399 ↗
5. G.H.Döhler: Phys. stat. sol. (b)52, 79 and 533 (1972)10.1002/pssb.2220520109 ↗
6. C.E.C. Wood, J.J.Harris: Paper presented at the 7th Intern. Symp. on GaAs and Related Compounds, Clayton, St. Louis (1978), and to be published
7. S.M.Sze:Physics of Semiconductor Devices (Wiley, New York 1969) p. 115
8. A.Fischer, K.Graf, M.Hafendörfer, H.Künzel, K.Ploog: To be published