journal article·1983-01

Annealing behavior of the 0.8 eV luminescence in undoped semiinsulating GaAs

J. Windscheif, H. Ennen, U. Kaufmann, J. Schneider, T. Kimura

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · GaN-based semiconductor devices and materials · Photocathodes and Microchannel Plates

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References (9)

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4. K.R. Elliott, D.E. Holmes, R.T. Chen, C.G. Kirkpatrick: Appl. Phys. Lett.40, 898 (1982)10.1063/1.92940 ↗
5. E.R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider: J. Appl. Phys.53, 6140 (1982)10.1063/1.331577 ↗
6. P.W. Yu, D.E. Holmes, R.T. Chen: Gallium Arsenide and Related Compounds 1981, Inst. Phys. Conf. Ser.63, 209 (1982)
7. M. Tajima: Jpn. J. Appl. Phys.21, L227 (1982)10.1143/JJAP.21.L227 ↗
8. R. Wörner, U. Kaufmann, J. Schneider: Appl. Phys. Lett.40, 141 (1982)10.1063/1.93016 ↗
9. A. Mircea-Roussel, S. Makram-Ebeid: Appl. Phys. Lett.38, 1007 (1981)10.1063/1.92247 ↗