journal article·1985-04

Evidence for two energy levels associated with EL2 trap in GaAs

T. Wosiński

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Electron and X-Ray Spectroscopy Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (20)

Show source-provided references
1. G.M. Martin, J.P. Farges, G. Jacob, J.P. Hallais, G. Poiblaud: J. Appl. Phys.51, 2840 (1980)10.1063/1.327952 ↗
2. D.E. Holmes, R.T. Chen, K.R. Elliott, C.G. Kirkpatrick: Appl. Phys. Lett.40, 46 (1982)10.1063/1.92913 ↗
3. J. Lagowski, H.C. Gatos, J.M. Parsey, K. Wada, M. Kamińska, W. Walukiewicz: Appl. Phys. Lett.40, 342 (1982)10.1063/1.93092 ↗
4. K.R. Elliott, D.E. Holmes, R.T. Chen, C.G. Kirkpatrick: Appl. Phys. Lett.40, 898 (1982)10.1063/1.92940 ↗
5. E.R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider, T. Wosiński: J. Appl. Phys.53, 6140 (1982)10.1063/1.331577 ↗
6. T. Wosiński, A. Morawski, T. Figielski: Appl. Phys. A30, 233 (1983)10.1007/BF00614772 ↗
7. T. Figielski, T. Wosiński, A. Morawski: J. Physique Suppl.44, C4–353 (1983)
8. D.V. Lang: InThermally Stimulated Relaxation in Solids, ed. by P. Bräunlich, Topics Appl. Phys.37 (Springer, Berlin, Heidelberg, New York 1979) Chap. 3
9. M. Kamińska, M. Skowroński, W. Kuszko, J. Lagowski, J. Parsey, H.C. Gatos: Czech. J. Phys. B34, 409 (1984)10.1007/BF01590082 ↗
10. K.R. Elliott, R.T. Chen, S.G. Greenbaum, R.J. Wagner: Appl. Phys. Lett.44, 907 (1984)10.1063/1.94930 ↗
11. T. Figielski: Appl. Phys. A36, 217–219 (1985)10.1007/BF00616556 ↗
12. T. Wosiński: Crystal Res. Technol.16, 217 (1981)10.1002/crat.19810160216 ↗
13. V.I. Fistul, L.Ya. Pervova, E.M. Omelyanovskii, E.P. Rashevskaya, N.N. Soloven, O.V. Pelevin: Fiz. Tekh. Poluprov.8, 485 (1974)
14. V.F. Masterov, B.E. Samorukov: Sov. Phys. Semicond.12, 363 (1978)
15. J. Bourgoin, M. Lannoo:Point Defects in Semiconductors II, Springer Ser. Solid-State Sci.35 (Springer, Berlin, Heidelberg, New York 1983)10.1007/978-3-642-81832-5 ↗
16. G. Vincent, D. Bois, A. Chantre: J. Appl. Phys.53, 3643 (1983)10.1063/1.331147 ↗
17. A. Chantre, G. Vincent, D. Bois: Phys. Rev. B23, 5335 (1981)10.1103/PhysRevB.23.5335 ↗
18. J. Domagała: M. Sc. Thesis, Warsaw University (1984)
19. T. Ishida, K. Maeda, S. Takeuchi: Appl. Phys.21, 257 (1980)10.1007/BF00886176 ↗
20. T. Wosiński, O. Breitenstein: Conf. Physics and Technology of GaAs and other III–V Semiconductors, Reinhardsbrunn, GDR (Nov. 19–24, 1984) (to be published)