The characteristics of high current amorphous silicon diodes

journal article·1980-04

R. A. Gibson, P. G. Le Comber, W. E. Spear

Applied physics· Volume 21· Issue 4

Bibliographic record

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Show source-provided references

1. W.E.Spear, P.G.LeComber: Solid State Commun.17, 1193–1196 (1975)10.1016/0038-1098(75)90284-7 ↗

2. W.E.Spear, P.G.Le Comber Philos. Mag.33, 935–949 (1976)10.1080/14786437608221926 ↗

3. W.E.Spear, P.G.Le Comber, S.Kinmond, M.H.Brodsky: Appl. Phys. Lett.28, 105–107 (1976)10.1063/1.88658 ↗

4. D.E.Carlson, C.R.Wronski: Appl. Phys. Lett.28, 671–673 (1976)10.1063/1.88617 ↗

5. D.I.Jones, R.A.Gibson, P.G.Le Comber, W.E.Spear: Sol. Energy Mater.2, 93–106 (1979)10.1016/0165-1633(79)90033-9 ↗

6. R.A.Gibson, P.G.Le Comber, W.E.Spear: Solid State Electron Dev.2, S3-S6 (1978)

7. See, for instance, S.M.Sze:Physics of Semiconductor Devices (Wiley-Interscience, New York 1969) Chap. 3