Strain gauges of GaSbFeGa1.3 eutectic composites
Source abstract
Abstract
A needle-shaped metallic FeGa1.3 phase oriented in a specific direction and uniformly distributed within a GaSb matrix was grown by a vertical Bridgman method. Strain-gauge characteristics, such as strain-sensitivity coefficient (S), temperature coefficient of strain sensitivity (TCS) and temperature coefficient of resistance, of GaSb and GaSbFeGa1.3 eutectic alloy have been investigated in the range of 200 to 400 K under deformation up to strains of 1.3×10-3. The value of S of the GaSbFeGa1.3 composition is measured to be 40±5 and its TCS is about 0.2 % deg-1 when the current is perpendicular to the needles and the needles are parallel to the plane of the gauge substrate. The strain-sensitivity characteristics are linear and hysteresis free in the investigated temperature range in the aforementioned direction. It was found that GaSbFeGa1.3-based strain gauges possess better deformation characteristics than GaSb-based gauges.
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Research context
OpenAlex topics: Magnetic Field Sensors Techniques · Advanced MEMS and NEMS Technologies · Magnetic Properties and Applications
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References (11)
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1. S. Middelhoek, A.A. Bellekom, U. Dauderstadt, P.J. French, S.R. in’tHout, W. Kindt, F. Riedijk, M.J. Vellekoop: Meas. Sci. Technol. 6, 1641 (1995)10.1088/0957-0233/6/12/001 ↗
2. F.Y. Obana, A.A. Carvalho, R. Gualda, J.G. da Silva: IEEE Instrumentation and Measurement Technology Conf. (Budapest, Hungary, 21–23 May 2001) 1, 429 (2001)10.1109/IMTC.2001.928854 ↗
3. A.A. Drujinin, I.I. Maryamova, E.N. Lavitskaya, A.Q. Kutrakov, Y.M. Pankov: Datchiki Syst. 6, 2 (2001)
4. I. Maryamova, A. Druzhinin, E.N. Lavitska, I. Gortynska, Y. Yatzuk: Sens. Actuators 85, 153 (2000)10.1016/S0924-4247(00)00376-9 ↗
5. K. Takayama: Denshi Kagaku Electron. Sci. (Jpn.) 13, 49 (1963)
6. R.W. Keyes, M. Pollak: Phys. Rev. 118, 1001 (1960)10.1103/PhysRev.118.1001 ↗
7. B.M. Askerov: Electron Transport Phenomena in Semiconductors (World Scientific, Singapore 1994)10.1142/1926 ↗
8. M.I. Aliyev, A.A. Khalilova, D.H. Arasly, R.N. Rahimov, M. Tanoglu, L. Ozyuzer: J. Phys. D: Appl. Phys. 36, 2627 (2003)10.1088/0022-3727/36/21/005 ↗
9. K.Sh. Kakhramanov, V.V. Didik: Metallofizika 3, 31 (1983)
10. A. Muller, M. Wilhelm: J. Phys. Chem. Solids 26, 2029 (1965)10.1016/0022-3697(65)90240-4 ↗
11. M.I. Aliyev, M. Tanoglu, A.A. Khalilova, R.N. Rahimov, D.H. Arasly: Azerb. Natl. Acad. Sci. Trans. Ser. Phys. Math. Technol. Sci. 22, 104 (2002)