Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures
Source abstract
Abstract
In this work, the effects of the substrate material on the electrical properties of self-assembled InAs quantum dots (QDs)-based laser structures have been reported. Two InAs QD laser structures with the same active regions deposited on GaAs and Si substrates utilizing strain reducing layer (SRL) containing GaAs/InGaAs have been investigated using current–voltage (I–V), capacitance–voltage, and Deep-Level Transient Spectroscopy (DLTS) techniques. The I–V measurements illustrated that the rectification ratio (IF/IR) and built-in potential (ϕB) for the sample deposited on Si substrate are higher than that of sample deposited on GaAs substrate. However, the series resistance (Rs) of the InAs QDs deposited on Si substrate is lower than that of the InAs QDs deposited on GaAs substrate. The DLTS and Laplace-DLTS measurements showed that the number of traps in InAs QDs/GaAs devices is lower than that in InAs QDs/Si devices, corroborating with I–V results.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
Show source-provided references
1. J. Wu, S. Chen, A. Seeds, H. Liu, J. Phys. D. Appl. Phys. 48, 363001 (2015)10.1088/0022-3727/48/36/363001 ↗
2. D. Bimberg, J. Phys. D. Appl. Phys. 38, 2055 (2005)10.1088/0022-3727/38/13/001 ↗
3. D.L. Huffaker, G. Park, Z. Zou, O.B. Shchekin, D.G. Deppe, Appl. Phys. Lett. 73, 2564 (1998)10.1063/1.122534 ↗
4. J.C. Norman, R.P. Mirin, J.E. Bowers, J. Vac. Sci. Technol. A 39, 020802 (2021)10.1116/6.0000768 ↗
5. S. Mokkapati, M. Buda, H.H. Tan, C. Jagadish, Appl. Phys. Lett. 88, 1 (2006)10.1063/1.2193433 ↗
6. A. R. Kovsh, N. A. Maleev, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil’ev, Y. M. Shernyakov, M. V. Maximov, D. A. Livshits, V. M. Ustinov, Z. I. Alferov, N. N. Ledentsov, D. Bimberg, in MBE 2002 - 2002 12th Int. Conf. Mol. Beam Ep., pp 237–238 (2002)
7. Q. Cao, S.F. Yoon, C.Y. Liu, C.Y. Ngo, Nanoscale Res. Lett. 2, 303 (2007)10.1007/s11671-007-9066-4 ↗
8. M. Benyoucef, A. Rastelli, O.G. Schmidt, S.M. Ulrich, P. Michler, Nanoscale Res. Lett. 1, 172 (2006)10.1007/s11671-006-9019-3 ↗
9. O.B. Shchekin, D.G. Deppe, IEEE Photonics Technol. Lett. 14, 1231 (2002)10.1109/LPT.2002.801597 ↗
10. K. Li, M. Tang, M. Liao, J. Wu, S. Chen, A. Seeds, H. Liu, Tech. Dig. - Int. Electron Devices Meet. IEDM 2018-Decem, 23.5.1 (2019).10.1109/IEDM.2018.8614481 ↗
11. S.S. Mikhrin, A.R. Kovsh, I.L. Krestnikov, A.V. Kozhukhov, D.A. Livshits, N.N. Ledentsov, Y.M. Shernyakov, I.I. Novikov, M.V. Maximov, V.M. Ustinov, Z.I. Alferov, Semicond. Sci. Technol. 20, 340 (2005)10.1088/0268-1242/20/5/002 ↗
12. N. Al-Saqri, J.F. Felix, M. Aziz, D. Jameel, C.I.L. De Araujo, H. Albalawi, F. Al-Mashary, H. Alghamdi, D. Taylor, M. Henini, Curr. Appl. Phys. 15, 1230 (2015)10.1016/j.cap.2015.07.010 ↗
13. C.Y. Liu, M. Stubenrauch, D. Bimberg, Nanotechnology 22, 235202 (2011)10.1088/0957-4484/22/23/235202 ↗
14. D. Mowbray, Laser Focus World 41, 157 (2005)
15. D. Bimberg, Electron. Lett. 44, 168 (2008)10.1049/el:20080074 ↗
16. A.Y. Liu, S. Srinivasan, J. Norman, A.C. Gossard, J.E. Bowers, Photonics Res. 3, 1 (2015)10.1364/PRJ.3.0000B1 ↗
17. A. Lee, Q. Jiang, M. Tang, A. Seeds, H. Liu, Opt. Express 20, 22181 (2012)10.1364/OE.20.022181 ↗
18. Z. Mi, J. Yang, P. Bhattacharya, G. Qin, Z. Ma, Proc. IEEE 97, 1239 (2009)10.1109/JPROC.2009.2014780 ↗
19. M. Al-Huwayz, H.V.A. Galeti, O.M. Lemine, K.H. Ibnaouf, A. Alkaoud, Y. Alaskar, A. Salhi, S. Alhassan, S. Alotaibi, A. Almalki, A. Almunyif, A. Alhassni, D.A. Jameel, Y.G. Gobato, M. Henini, J. Lumin. 251, 119155 (2022)10.1016/j.jlumin.2022.119155 ↗
20. A. Salhi, S. Alshaibani, Y. Alaskar, A. Albadri, A. Alyamani, J. Alloys Compd. 771, 382 (2019)10.1016/j.jallcom.2018.08.276 ↗
21. D.A. Jameel, M. Aziz, J.F. Felix, N. Al-Saqri, D. Taylor, H. Albalawi, H. Alghamdi, F. Al-Mashary, M. Henini, Appl. Surf. Sci. 387, 228 (2016)10.1016/j.apsusc.2016.06.097 ↗
22. S.F. Chung, T.C. Wen, A. Gopalan, Mater. Sci. Eng. B Solid State Mater. Adv. Technol. 116, 125 (2005)10.1016/j.mseb.2004.09.023 ↗
23. J.H. Werner, Appl. Phys. A Solids Surf. 47, 291 (1988)10.1007/BF00615935 ↗
24. C. Van Nguyen, K. Potje-Kamloth, Thin Solid Films 392, 113 (2001)10.1016/S0040-6090(01)00837-9 ↗
25. S.K. Tripathi, M. Sharma, J. Appl. Phys. 111, 074513 (2012)10.1063/1.3698773 ↗
26. S. Chand, Semicond. Sci. Technol. 19, 82 (2004)10.1088/0268-1242/19/1/014 ↗
27. A. Tataroǧlu, Ş Altindal, F.Z. Pür, T. Ataseven, Ş Sezgin, Optoelectron. Adv. Mater. Rapid Commun. 5, 438 (2011)
28. J.S. Kim, E.K. Kim, J.O. Kim, S.J. Lee, S.K. Noh, Superlattices Microstruct. 46, 312 (2009)10.1016/j.spmi.2009.01.011 ↗
29. D.V. Lang, J. Appl. Phys. 45, 3023 (1974)10.1063/1.1663719 ↗
30. L. Dobaczewski, A.R. Peaker, K. Bonde-Nielsen, J. Appl. Phys. 96, 4689 (2004)10.1063/1.1794897 ↗
31. S. I. Sato, K. J. Schmieder, S. M. Hubbard, D. V. Forbes, J. H. Warner, T. Ohshima, R. J. Walters, 2015 IEEE 42nd Photovolt. Spec. Conf. PVSC 1 (2015)10.1109/PVSC.2015.7355868 ↗
32. J. Lagowski, M. Kaminska, J.M. Parsey, H.C. Gatos, M. Lichtensteiger, Appl. Phys. Lett. 41, 1078 (1982)10.1063/1.93407 ↗
33. K. Yokota, H. Kuchii, K. Nakamura, M. Sakaguchi, H. Takano, Y. Ando, J. Appl. Phys. 88, 5017 (2000)10.1063/1.1315331 ↗
34. R. Yakimova, T. Paskova, C. Hardalov, J. Appl. Phys. 74, 6170 (1993)10.1063/1.355184 ↗
35. G.M. Martin, A. Mitonneau, A. Mircea, Electron. Lett. 13, 191 (1977)10.1049/el:19770140 ↗