Nonvolatile Memory With Ge/Si Heteronanocrystals as Floating Gate
Source abstract
Abstract
A p-channel memory with Ge/Si heteronanocrystals (HNCs) as the floating gate was fabricated and tested. The nanocrystals (NCs) were synthesized by low-pressure chemical vapor deposition of Si NCs followed by selective growth of Ge on top of Si. Both hole and electron storages were characterized in Ge/Si HNC memory. Fowler-Nordheim and hot carrier injection programming operations were studied. Compared to Si NC memory, enhanced memory performances were demonstrated in Ge/Si HNC memory in terms of longer retention, larger storage capability, and faster programming.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
Show source-provided references
1. 10.1109/55.87061110.1109/55.870611 ↗
2. 10.1143/JJAP.38.245310.1143/JJAP.38.2453 ↗
3. 10.1016/S0039-6028(01)01650-810.1016/S0039-6028(01)01650-8 ↗
4. 10.1063/1.12113110.1063/1.121131 ↗
5. 10.1063/1.212615010.1063/1.2126150 ↗
6. 10.1109/IPFA.2008.458819010.1109/IPFA.2008.4588190 ↗
7. 10.1063/1.271684510.1063/1.2716845 ↗
8. Theoretical and experimental investigation of Si NC memory device with ${\rm HfO}\rm 2$ high-κ tunneling dielectric
9. 10.1063/1.279368710.1063/1.2793687 ↗
10. 10.1016/j.apsusc.2003.08.07910.1016/j.apsusc.2003.08.079 ↗
11. 10.1109/TNANO.2005.86140510.1109/TNANO.2005.861405 ↗
12. 10.1063/1.243494710.1063/1.2434947 ↗
13. 10.1063/1.274257310.1063/1.2742573 ↗
14. 10.1063/1.240223210.1063/1.2402232 ↗
15. 10.1016/j.apsusc.2004.06.13010.1016/j.apsusc.2004.06.130 ↗
16. 10.1109/TED.2006.87118510.1109/TED.2006.871185 ↗
17. 10.1063/1.163203710.1063/1.1632037 ↗
18. 10.1109/IEDM.2003.126935310.1109/IEDM.2003.1269353 ↗
19. MOS memory using germanium nanocrystals formed by thermal oxidation of ${\rm Si}_{{\rm 1 - x}} {\rm Ge}\rm x$
20. 10.1063/1.233597610.1063/1.2335976 ↗
21. 10.1109/TED.2006.87028110.1109/TED.2006.870281 ↗
22. 10.1063/1.193103110.1063/1.1931031 ↗
23. 10.1109/TED.2003.81652510.1109/TED.2003.816525 ↗
24. 10.1063/1.11742110.1063/1.117421 ↗
25. 10.1109/DRC.2005.155307710.1109/DRC.2005.1553077 ↗
26. 10.1109/IEDM.1995.49925210.1109/IEDM.1995.499252 ↗
27. 10.1016/j.sse.2007.03.01710.1016/j.sse.2007.03.017 ↗
28. 10.1063/1.128965910.1063/1.1289659 ↗
29. 10.1109/TED.2003.81652510.1109/TED.2003.816525 ↗
30. 10.1063/1.175161610.1063/1.1751616 ↗
31. 10.1103/PhysRevLett.80.380310.1103/PhysRevLett.80.3803 ↗
32. 10.1063/1.11962510.1063/1.119625 ↗
33. 10.1063/1.12187510.1063/1.121875 ↗