Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs
Source abstract
Abstract
We have studied the Si doping efficiency in dilute nitride GaNAs by gas-source molecular beam epitaxy across a substrate temperature range from 460 to 570 °C. Particularly, for samples grown at ~480 °C, the doping efficiency changes drastically from 100 to almost 0 % as the N compositions varies from 0 to 3.1 %. By comparing experimental data to Monte Carlo simulation of N adatom surface diffusion during growth, the change in doping efficiency is believed to be due to passivation of Si dopants by N during epitaxy.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Semiconductor Quantum Structures and Devices
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References (38)
Show source-provided references
1. M. Weyers, M. Sato, H. Ando, Jpn. J. Appl. Phys. 31(7A), L853–L855 (1992)10.1143/JJAP.31.L853 ↗
2. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, Jpn. J. Appl. Phys. 35(2B), 1273–1275 (1996)10.1143/JJAP.35.1273 ↗
3. W. Shan, W. Walukiewicz, J.W. Ager III, E.E. Haller, J.F. Geisz, D.J. Friedman, J.M. Olson, S.R. Kurtz, Phys. Rev. Lett. 82(6), 1221–1224 (1999)10.1103/PhysRevLett.82.1221 ↗
4. M.A. Wistey, S.R. Bank, H.B. Yuen, H. Bae, J.S. Harris, J. Cryst. Growth 278(1–4), 229–233 (2005)10.1016/j.jcrysgro.2004.12.060 ↗
5. H.P. Xin, R.J. Welty, C.W. Tu, Appl. Phys. Lett. 77(13), 1946–1948 (2000)10.1063/1.1311957 ↗
6. J.E. Stehr, A. Dobrovolsky, S. Sukrittanon, Y. Kuang, C. Tu, W.M. Chen, I.A. Buyanova, Nano Lett. 15(1), 242–247 (2014)10.1021/nl503454s ↗
7. Y.J. Kuang, K. Takabayashi, S. Sukrittanon, J.L. Pan, I. Kamiya, C.W. Tu, Appl. Phys. Lett. 105(17), 173112 (2014)10.1063/1.4900960 ↗
8. P. Pichanusakorn, Y.J. Kuang, C.J. Patel, C.W. Tu, P.R. Bandaru, Appl. Phys. Lett. 99(7), 072114 (2011)10.1063/1.3626041 ↗
9. P. Pichanusakorn, Y.J. Kuang, C. Patel, C.W. Tu, P.R. Bandaru, Phys. Rev. B 86(8), 085314 (2012)10.1103/PhysRevB.86.085314 ↗
10. E. Luna, M. Hopkinson, J.M. Ulloa, A. Guzman, E. Munoz, Appl. Phys. Lett. 83(15), 3111–3113 (2003)10.1063/1.1618931 ↗
11. N. López, L.A. Reichertz, K.M. Yu, K. Campman, W. Walukiewicz, Phys. Rev. Lett. 106(2), 028701 (2011)10.1103/PhysRevLett.106.028701 ↗
12. Y.J. Kuang, K.M. Yu, R. Kudrawiec, A.V. Luce, M. Ting, W. Walukiewicz, C.W. Tu, Appl. Phys. Lett. 102(11), 112105 (2013)10.1063/1.4795782 ↗
13. R. Kudrawiec, A.V. Luce, M. Gladysiewicz, M. Ting, Y.J. Kuang, C.W. Tu, O.D. Dubon, K.M. Yu, W. Walukiewicz, Phys. Rev. Appl. 1(3), 034007 (2014)10.1103/PhysRevApplied.1.034007 ↗
14. Y.J. Kuang, S. Sukrittanon, H. Li, C.W. Tu, Appl. Phys. Lett. 100(5), 053108 (2012)10.1063/1.3681172 ↗
15. S. Sukrittanon, Y. Kuang, C.W. Tu, J. Vac. Sci. Technol. B Nanotechnol. Microelectron. Nanometer Struct. 31(3), 03C110 (2013)
16. A. Dobrovolsky, J.E. Stehr, S.L. Chen, Y.J. Kuang, S. Sukrittanon, C.W. Tu, W.M. Chen, I.A. Buyanova, Appl. Phys. Lett. 101(16), 163106 (2012)10.1063/1.4760273 ↗
17. S. Sukrittanon, Y.J. Kuang, A. Dobrovolsky, W.-M. Kang, J.-S. Jang, B.-J. Kim, W.M. Chen, I.A. Buyanova, C.W. Tu, Appl. Phys. Lett. 105(7), 07210 (2014)10.1063/1.4893745 ↗
18. A. Dobrovolsky, S. Sukrittanon, Y. Kuang, C.W. Tu, W.M. Chen, I.A. Buyanova, Small 10(21), 4403 (2014)10.1002/smll.201401342 ↗
19. S. Filippov, S. Sukrittanon, Y. Kuang, C. Tu, P.O.Å. Persson, W.M. Chen, I.A. Buyanova, Nano Lett. 14(9), 5264–5269 (2014)10.1021/nl502281p ↗
20. J.J. Gersten, F.W. Smith, The physics and chemistry of materials (Wiley, New York, 2001)
21. S. Fahy, E.P.O. Reilly, Appl. Phys. Lett. 83, 3731 (2003)10.1063/1.1622444 ↗
22. K.M. Yu, W. Walukiewicz, J. Wu, D.E. Mars, D.R. Chamberlin, M.A. Scarpulla, O.D. Dubon, J.F. Geisz, Nat. Mater. 1(3), 185–189 (2002)10.1038/nmat754 ↗
23. J. Li, P. Carrier, S.-H. Wei, S.-S. Li, J.-B. Xia, Phys. Rev. Lett. 96(3), 035505 (2006)10.1103/PhysRevLett.96.035505 ↗
24. A. Janotti, P. Reunchan, S. Limpijumnong, C.G. Van de Walle, Phys. Rev. Lett. 100(4), 045505 (2008)10.1103/PhysRevLett.100.045505 ↗
25. Y.G. Chai, C.E.C. Wood, R. Chow, Appl. Phys. Lett. 39(10), 800–803 (1981)10.1063/1.92562 ↗
26. Y. Jin, Y. He, H. Cheng, R.M. Jock, T. Dannecker, M. Reason, A.M. Mintairov, C. Kurdak, J.L. Merz, R.S. Goldman, Appl. Phys. Lett. 95(9), 092109 (2009)10.1063/1.3198207 ↗
27. F. Ishikawa, G. Mussler, K.J. Friedland, H. Kostial, K. Hagenstein, L. Daweritz, K.H. Ploog, Appl. Phys. Lett. 87(26), 262112–262113 (2005)10.1063/1.2158511 ↗
28. Y.-J. Kuang, S.-W. Chen, H. Li, S.K. Sinha, C.W. Tu, J. Vac. Sci. Technol. B Microelectron. Nanometer. Struct. 30(2), 02B121 (2012)10.1116/1.3680603 ↗
29. W.G. Bi, F. Deng, S.S. Lau, C.W. Tu, J. Vac. Sci. Technol. B 13(2), 754–757 (1995)10.1116/1.588155 ↗
30. M. Heiblum, W.I. Wang, L.E. Osterling, V. Deline, J. Appl. Phys. 54(11), 6751–6753 (1983)10.1063/1.331867 ↗
31. R.J. Malik, J. Nagle, M. Micovic, T. Harris, R.W. Ryan, L.C. Hopkins, J. Vac. Sci. Technol. B 10(2), 850–852 (1992)10.1116/1.586133 ↗
32. M. Ogawa, T. Baba, Jpn J Appl Phys. 2 24(8), L572–L574 (1985)10.1143/JJAP.24.L572 ↗
33. G. Bosker, N.A. Stolwijk, J.V. Thordson, U. Sodervall, T.G. Andersson, Phys. Rev. Lett. 81(16), 3443–3446 (1998)10.1103/PhysRevLett.81.3443 ↗
34. E.F. Schubert, Doping in III-V semiconductors (Cambridge University Press, Cambridge England, New York, 1993)10.1017/CBO9780511599828 ↗
35. Fisher R, Hopkins CG, Evans CA Jr., Drummond TJ, Lyons WG, Klem J, Colvard C, Morkoç H, presented at the GaAs and Related Compound, In: Institute Physics Conference, Serial No. 65, (1983) (unpublished)
36. W.M. McGee, P.A. Bone, R.S. Williams, T.S. Jones, Appl Phys Lett 87(18), 181905 (2005)10.1063/1.2120917 ↗
37. M. Reason, N.G. Rudawski, H.A. McKay, X. Weng, W. Ye, R.S. Goldman, J Appl Phys 101(8), 83520 (2007)10.1063/1.2719275 ↗
38. J.J.S. Harris, H.B. Yuen, S.R. Bank, M.A. Wistey, V. Lordi, T. Gugov, H. Bae, L. L. Goddard, in Dilute Nitride Semiconductors, ed. by M. Henini (Elsevier, Oxford, 2005), pp. 1–9210.1016/B978-008044502-1/50001-9 ↗