Investigation of Channel Backscattering Characteristics in Nanoscale Uniaxial-Strained PMOSFETs
Source abstract
Abstract
This paper examines channel backscattering characteristics for nanoscale strained and unstrained p-channel MOSFETs (PMOSFETs) using the experimentally extracted backscattering coefficients by our modified self-consistent temperature-dependent extraction method. Through comparing the gate voltage and temperature dependence, we demonstrate that channel backscattering can be reduced by the uniaxial strain for PFETs. Besides, we show that the strain-reduced conductivity effective mass may raise the thermal velocity, mean-free path, and effective mobility. Contrary to previous studies, our results indicate that the ballistic efficiency can be enhanced for compressive-strained PFETs. In addition, the backscattering effect on the electrostatic potential is discussed.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
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1. 10.1109/IEDM.2005.160928910.1109/IEDM.2005.1609289 ↗
2. 10.1109/ESSDER.2006.30764510.1109/ESSDER.2006.307645 ↗
3. Will strain be useful for 10 nm quasi-ballistic FDSOI devices? An experimental study
4. 10.1109/TED.2008.92101710.1109/TED.2008.921017 ↗
5. 10.1109/IEDM.2002.117577410.1109/IEDM.2002.1175774 ↗
6. 10.1109/TED.2004.83358610.1109/TED.2004.833586 ↗
7. 10.1109/IEDM.2007.441887510.1109/IEDM.2007.4418875 ↗
8. 10.1109/LED.2007.90029710.1109/LED.2007.900297 ↗
9. 10.1109/LED.2007.90985010.1109/LED.2007.909850 ↗
10. 10.1109/16.98712010.1109/16.987120 ↗
11. 10.1063/1.35726310.1063/1.357263 ↗
12. 10.1109/LED.2008.200090910.1109/LED.2008.2000909 ↗
13. 10.1109/55.92484610.1109/55.924846 ↗
14. 10.1109/55.59693710.1109/55.596937 ↗
15. Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor10.1063/1.2839402 ↗
16. 10.1109/IEDM.2006.34687210.1109/IEDM.2006.346872 ↗
17. 10.1109/TNANO.2008.200477110.1109/TNANO.2008.2004771 ↗
18. 10.1109/LED.2005.85366910.1109/LED.2005.853669 ↗
19. 10.1109/VLSIT.2007.433975510.1109/VLSIT.2007.4339755 ↗
20. 10.1109/16.97476010.1109/16.974760 ↗
21. 10.1109/16.3095910.1109/16.30959 ↗
22. 10.1109/TED.2005.85618110.1109/TED.2005.856181 ↗
23. Electron-thermal comparison and performance optimization of thin-body SOI and GOI MOSFETs
24. 10.1016/0038-1101(96)00034-210.1016/0038-1101(96)00034-2 ↗
25. 10.1109/TED.2003.81350310.1109/TED.2003.813503 ↗
26. Impact of uniaxial strain on channel backscattering characteristics and drain current variation for nanoscale PMOSFETs