Heterostructure of GeSe2−xSnx/n-Si solar cells: electronic properties and improvement of photoelectrical performance
Source abstract
Abstract
Heterostructures of GeSe2−xSnx/n-Si (0 ≤ x ≤ 0.8) solar cells were made by vacuum deposition. Electronic and photoelectrical performances of these cells were investigated in details. The effective transport mechanisms were observed to be the thermionic emanation and space-charge-limited current with a single trap level for low and high forward voltage, respectively. Under reverse bias, the effective conduction mechanism is the Poole–Frenkel effect in the low voltage and the Schottky effect in the higher voltage. From the capacitance–voltage measurement, it was found that the heterostructure with x = 0.8 showed the highest carrier concentration and lowest built-in voltage demonstrated that the Sn doping improved the GeSe2−xSnx/n-Si interface. The heterostructures demonstrated a decent reaction to the light where light influences the reverse current because of the making of photocurrent. The heterostructure with x = 0.8 displayed higher photoelectrical performance.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films
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