Absorption spectra of different InGaN-GaN QD-shapes coupled to wetting layer

Wetting layer-dependent optical absorption spectra of wurtzite (In,Ga)N/GaN QDs corresponding to different shapes are investigated in this paper. Based on the numerical finite element method, the stationary Schrodinger equation is resolved. Using one-band parabolic effective mass, electronic states in the conduction band are computed under the finite potential barrier. Strained confining potential and band gap values were utilized. Strong wetting layer thickness and size impacts on P-to-S transition energy, dipole moment, oscillator strength and optical absorption spectra were illustrated. Significant red shift is induced as the WL thickness increases. Two behaviors, blue and red shifts, have obtained limited by a critical dot size.