Photoluminescence peculiarities of epitaxial structure with 2DEG layer designed for microwave detectors
Source abstract
Abstract
We use two simple analysis methods to determine quantum efficiency and relative carrier recombination rates in GaAs layers of microwave detector. By means of these methods, we evaluate internal quantum efficiency as a function of pump power and temperature. It does not have the highest value at low temperatures as usual, but increases with temperature and reaches nearly 99% at liquid nitrogen or room temperature depending on pump power.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Optical properties and cooling technologies in crystalline materials · Superconducting and THz Device Technology · Spectroscopy and Laser Applications
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References (30)
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1. T. Fleck, M. Schmidt, C. Klingshirn, Phys. Status Solidi (a) 198(1), 248 (2003). https://doi.org/10.1002/pssa.20030660710.1002/pssa.200306607 ↗
2. R. Westphäling, P. Ullrich, J. Hoffmann, H. Kalt, C. Klingshirn, K. Ohkawa, D. Hommel, J. Appl. Phys. 84(12), 6871 (1998). https://doi.org/10.1063/1.36898210.1063/1.368982 ↗
3. K.R. Catchpole, K.L. Lin, P. Campbell, M.A. Green, A.W. Bett, F. Dimroth, Semicond. Sci. Technol. 19(11), 1232 (2004). https://doi.org/10.1088/0268-1242/19/11/00310.1088/0268-1242/19/11/003 ↗
4. R.J. Nelson, R.G. Sobers, J. Appl. Phys. 49(12), 6103 (1978). https://doi.org/10.1063/1.32453010.1063/1.324530 ↗
5. R.K. Ahrenkiel, Solid State Electron. 35(3), 239 (1992). https://doi.org/10.1016/0038-1101(92)90228-510.1016/0038-1101(92)90228-5 ↗
6. H. Gauck, T.H. Gfroerer, M.J. Renn, E.A. Cornell, K.A. Bertness, Appl. Phys. A 64(2), 143 (1997). https://doi.org/10.1007/s00339005045510.1007/s003390050455 ↗
7. C.E. Martinez, N.M. Stanton, A.J. Kent, D.M. Graham, P. Dawson, M.J. Kappers, C.J. Humphreys, J. Appl. Phys. 98(5), 053509 (2005). https://doi.org/10.1063/1.203314410.1063/1.2033144 ↗
8. S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, H. Kudo, Appl. Phys. Lett. 83(24), 4906 (2003). https://doi.org/10.1063/1.163367210.1063/1.1633672 ↗
9. A. Sasaki, S. Shibakawa, Y. Kawakami, K. Nishizuka, Y. Narukawa, T. Mukai, Jpn. J. Appl. Phys. 45(11), 8719 (2006). http://iopscience.iop.org/1347-4065/45/11R/871910.1143/JJAP.45.8719 ↗
10. I. Schnitzer, E. Yablonovitch, C. Caneau, T.J. Gmitter, Appl. Phys. Lett. 62(2), 131 (1993). https://doi.org/10.1063/1.10934810.1063/1.109348 ↗
11. H.Y. Ryu, K.H. Ha, J.H. Chae, K.S. Kim, J.K. Son, O.H. Nam, Y.J. Park, J.I. Shim, Appl. Phys. Lett. 89(17), 171106 (2006). https://doi.org/10.1063/1.236427310.1063/1.2364273 ↗
12. G.B. Ren, H. Summers, P. Blood, R. Perks, D. Bour, Proc. SPIE 4283, 78–84 (2001). https://doi.org/10.1117/12.43262610.1117/12.432626 ↗
13. S.R. Johnson, D. Ding, J.B. Wang, S.Q. Yu, Y.H. Zhang, J. Vac. Sci. Technol. B 25(3), 1077 (2007). https://doi.org/10.1116/1.272086410.1116/1.2720864 ↗
14. J.B. Wang, D. Ding, S.R. Johnson, S.Q. Yu, Y.H. Zhang, Phys. Status Solidi (b) 244(8), 2740 (2007). https://doi.org/10.1002/pssb.20067561210.1002/pssb.200675612 ↗
15. A.W. Walker, S. Heckelmann, C. Karcher, O. Hhn, C. Went, M. Niemeyer, A.W. Bett, D. Lackner, J. Appl. Phys. 119(15), 155702 (2016). https://doi.org/10.1063/1.494577210.1063/1.4945772 ↗
16. D. Ding, S.R. Johnson, J.B. Wang, S.Q. Yu, Y.H. Zhang, Proc. SPIE 6841, 68410D–8 (2007). https://doi.org/10.1117/12.75959210.1117/12.759592 ↗
17. Q. Dai, M.F. Schubert, M.H. Kim, J.K. Kim, E.F. Schubert, D.D. Koleske, M.H. Crawford, S.R. Lee, A.J. Fischer, G. Thaler, M.A. Banas, Appl. Phys. Lett. 94(11), 111109 (2009). https://doi.org/10.1063/1.310077310.1063/1.3100773 ↗
18. Y. Xing, L. Wang, D. Yang, Z. Wang, Z. Hao, C. Sun, B. Xiong, Y. Luo, Y. Han, J. Wang, H. Li, Sci. Rep. 7, 45802 (2017). https://doi.org/10.1038/srep4508210.1038/srep45082 ↗
19. S. Ašmontas, V. Kazlauskaitė, A. Sužiedėlis, J. Gradauskas, V. Derkach, J. Phys. Conf. Ser. 193(1), 012120 (2009). https://doi.org/10.1088/1742-6596/193/1/01212010.1088/1742-6596/193/1/012120 ↗
20. R. Heilman, G. Oelgart, Semicond. Sci. Technol. 5(10), 1040 (1990). https://doi.org/10.1088/0268-1242/5/10/00610.1088/0268-1242/5/10/006 ↗
21. G. Oelgart, G. Lippold, M. Proctor, D. Martin, F. Reinhart, Semicond. Sci. Technol. 6(12), 1120 (1991). https://doi.org/10.1088/0268-1242/6/12/00310.1088/0268-1242/6/12/003 ↗
22. A. Čerškus, J. Kundrotas, V. Nargelienė, A. Sužiedėlis, S. Ašmontas, J. Gradauskas, A. Johannessen, E. Johannessen, Lith. J. Phys. 51(4), 330 (2011). https://doi.org/10.3952/lithjphys.5140610.3952/lithjphys.51406 ↗
23. G.W. p’t Hooft, W.A.J.A. van der Poel, L.W. Molenkamp, C.T. Foxon, Phys. Rev. B 35, 8281 (1987). https://doi.org/10.1103/PhysRevB.35.828110.1103/PhysRevB.35.8281 ↗
24. S. Schmitt-Rink, D.S. Chemla, D.A.B. Miller, Phys. Rev. B 32(10), 6601 (1985). https://doi.org/10.1103/PhysRevB.32.660110.1103/PhysRevB.32.6601 ↗
25. T.J. Badcock, M. Ali, T. Zhu, M. Pristovsek, R.A. Oliver, A.J. Shields, Appl. Phys. Lett. 109(15), 211107 (2016). https://doi.org/10.1063/1.496484210.1063/1.4964842 ↗
26. Y. Iwata, R.G. Banal, S. Ichikawa, M. Funato, Y. Kawakami, J. Appl. Phys. 117(7), 075701 (2015). https://doi.org/10.1063/1.490828210.1063/1.4908282 ↗
27. Y.S. Yoo, T.M. Roh, J.H. Na, S.J. Son, Y.H. Cho, Appl. Phys. Lett. 102(21), 211107 (2013). https://doi.org/10.1063/1.480748510.1063/1.4807485 ↗
28. G.B. Lin, D. Meyaard, J. Cho, E.F. Schubert, H. Shim, C. Sone, Appl. Phys. Lett. 100(16), 161106 (2012). https://doi.org/10.1063/1.470436610.1063/1.4704366 ↗
29. T. Kohno, Y. Sudo, M. Yamauchi, K. Mitsui, H. Kudo, H. Okagawa, Y. Yamada, Jpn. J. Appl. Phys. 51(7R), 072102 (2012). https://doi.org/10.1143/JJAP.51.07210210.1143/JJAP.51.072102 ↗
30. J. Hader, J.V. Moloney, S.W. Koch, Appl. Phys. Lett. 96(22), 221106 (2010). https://doi.org/10.1063/1.344688910.1063/1.3446889 ↗