Band gap energy of ZnOxSe1−x over the entire composition range
Source abstract
Abstract
A model predicting the band gap energy of ZnOxSe1−x over the entire composition range is set up. It is found that the model can provide a good description for the band gap energy of ZnOxSe1−x. It is also found that the physical mechanisms for the band gap evolution in different composition ranges are different. Although the physical mechanism for the band gap evolution in the Se-rich region differs from that in the O-rich region, the difference between the band gap reductions in the Se-rich and O-rich regions is not large. In addition, it is found that the band gap bowing in the middle composition region is smaller than that in the Se-rich and O-rich regions. The reason is that the middle composition region lies in the bandlike region while the Se-rich and the O-rich composition regions lie in the impurity-like region.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
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