journal article·2018-09

Hydrogen in optical germanium and reduction of its negative impact on the crystal properties by ultrasonic processing

G. S. Pekar, A. F. Singaevsky, M. M. Lokshin, A. A. Singaevsky

Applied Physics A· Volume 124· Issue 9
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Abstract

Hydrogen content and its effect on the properties of optical germanium has been first investigated. Large coarse-grained plates of Na-doped optical germanium, grown in an inert atmosphere, are shown to contain dissolved hydrogen in a concentration about 1.9 × 1017 cm− 3. It is shown that the presence of hydrogen can lead to the porosity of the plates, to the plate cracking and to the release of toxic gases during plate machining, as well as to some other negative effects. A technique for ultrasonic plate processing has been developed, which leads to a decrease in the hydrogen content by about 7 times, to an increase in the mechanical strength of the plates, to an increase in the material density, to a decrease in the Ge lattice parameter, and ultimately to eliminating all listed negative effects caused by the presence of hydrogen. The developed method of plate processing has found a successful application in the industrial production of protective screens for thermal imaging systems of night vision based on optical germanium plates.
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Research context

OpenAlex topics: Thermography and Photoacoustic Techniques · Laser Material Processing Techniques · Ion-surface interactions and analysis

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References (26)

Show source-provided references
1. M. Hiller, E.V. Lavrov, J. Weber, B. Hourahine, R. Jones, P.R. Briddon, Phys. Rev. B 72, 153201–153201 (2005)10.1103/PhysRevB.72.153201 ↗
2. J. Weber, M. Hiller, E.V. Lavrov, Mater. Sci. Semicond. Process. 9, 564 (2006). ( https://doi.org/10.1016/j.mssp.2006.08.007 )10.1016/j.mssp.2006.08.007 ↗
3. W.L. Hansen, E.E. Haller, P.N. Luke, IEEE Trans. Nucl. Sci. 29, 738 (1982). ( https://doi.org/10.1109/TNS.1982.4335948 )10.1109/TNS.1982.4335948 ↗
4. V.P. Kalinushkin, V.V. Voronkov, G.I. Voronkova, V.N. Golovina, B.V. Zubov, T.M. Murina, A.M. Prokhorov, in Physical Processes in Laser-Materials Interactions, ed. by M. Bertolotti. Proc. of the 1980 NATO Advanced Study Institutes Series, (Springer Science & Business Media, Berlin, 2013), p. 405
5. I.A. Kaplunov, A.I. Kolesnikov, Surf. Investig. X-Ray Synchrotron Neutron Tech. 2, 14 (2002) (in Russian)
6. G.S. Pekar, A.F. Singaevsky, Appl. Phys. A 108, 657 (2012). https://doi.org/10.1007/s00339-012-6947-x10.1007/s00339-012-6947-x ↗
7. G.S. Pekar, A.F. Singaevsky, Patent of Ukraine for Invention No. 81729, 25.01.2008
8. G.S. Pekar, A.F. Singaevsky, Mater. Sci. Semicond. Process. 64, 10 (2017). https://doi.org/10.1016/j.mssp.2017.02.02610.1016/j.mssp.2017.02.026 ↗
9. K.A. Bolshakova. Chemistry and technology of rare and scattered elements (Vischaya shkola, Moscow, 1976) (in Russian)
10. N. Alba-Baena, D. Eskin, in Light Metals 2013, ed. by B. Sadler. TMS (The Minerals, Metals & Materials Society, Pittsburgh, 2013), p. 957
11. P. Röntgen, H. Winterhagen, Aluminium-Arch. 9, 6–17 (1938)
12. G.V. Raynor. The physical metallurgy of magnesium and its alloys (Pergamon Press, London, 1959)
13. S.S. Ostapenko, N.E. Korsunskaya, M.K. Sheinkman, Solid State Phenom. 65–86, 317 (2002)
14. I.V. Ostrovskii, L.P. Steblenko, A.B. Nadtochii, Semiconductors 34, 251 (2000) https://doi.org/10.1134/1.118798910.1134/1.1187989 ↗
15. S. Kh, Bagdasarov, High-temperature crystallization from melt (Fizmatlit, Moscow, 2004) (in Russian)
16. N.A. Goryunova, A.S. Borshcevsky, L.N. Tretiakov, Semiconductors and Semimetals, vol. 4, Physics of III–V Compounds (Academic Press, London, 1968),p. 510
17. M. Balshin, S. Kiparisov, Fundamentals of Powder Metallurgy (Metallurgy, Moscow, 1978), p. 184
18. G.S. Pekar, А.А. Singaevsky, А.F. Singaevsky, Semicond. Phys. Quantum Electr. Optoelectronics 19, 23 (2016). https://doi.org/10.15407/spqeo19.01.02310.15407/spqeo19.01.023 ↗
19. I.A. Kaplunov, Inorg. Mater. 42, 586 (2006)10.1134/S0020168506060021 ↗
20. V.A. Volodin, M.D. Efremov, A.S. Deryabin, L.V. Sokolov, Semiconductors 40, 1314 (2006)10.1134/S106378260611011X ↗
21. R.T. Payne, Phys. Rev. Lett. 13, 53 (1964)10.1103/PhysRevLett.13.53 ↗
22. N.V. Zavaritsky, Lett. JETP 12, 26 (1970)
23. O.P. Matveeva, Dual Technol. 1 (50), 32 (2010) (in Russian)
24. A.G. Evans, E.A. Charles, J. Am. Cer. Soc. 59, 371 (1976)10.1111/j.1151-2916.1976.tb10991.x ↗
25. J. Salem, R. Rogers, E. Baker. NASA Technical Report, 2016. https://instr.nasa.gov//search.jsp?R=20160012342 2018-06-14TO8:12:14 + 00:00Z (2016)
26. W. Weibull, J. Appl. Mech. 18, 293 (1951)10.1115/1.4010337 ↗