Specular X-ray reflectivity study of interfacial SiO2 layer in thermally annealed NiO/Si assembly
Source abstract
Abstract
Present report details an analysis of X-ray reflectivity (XRR) for solution processed NiO thin films on Si (100) substrates. The films were annealed at 700–1,000 °C for 1 h in air. XRR data indicated growth of SiO2 layer from ~8 nm at 700 °C to ~66 nm at 1,000 °C along with significant variation of electron density profile. X-ray photoelectron spectroscopy and X-ray diffraction studies were used as supporting studies for phase purity and oxidation states of the NiO thin films as well as interfacial SiO2 layer.
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Research context
OpenAlex topics: Semiconductor materials and devices · Transition Metal Oxide Nanomaterials · Ga2O3 and related materials
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