Highly efficient inverted polymer solar cells using aqueous ammonia processed ZnO as an electron selective layer
Source abstract
Abstract
The authors demonstrate a simple method to deposit solution-processable ZnO thin film by directly dissolving the ZnO powder into aqueous ammonia. ZnO film casting from its aqueous ammonia solution (a-ZnO) is used successfully as an electron selective layer in poly(3-hexylthiophene) and indene-C60 bisadduct (IC60BA) based heterojunction solar cells with improved power conversion efficiency (PCE) compared with that using conventional sol–gel based ZnO (c-ZnO). The improved PCE is mainly attributed to an increase of short-circuit current density owing to the better transmittance of a-ZnO than that of c-ZnO in the absorption range of IC60BA, and efficient electron extraction at cathode. In addition, no additional by-products originated from the organic solvents are introduced as like in sol–gel based ZnO films.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
Show source-provided references
1. M.A. Green, K. Emery, Y. Hishikawa, W. Warta, E.D. Dunlop, Prog. Photovolt. 20, 12 (2012)10.1002/pip.2163 ↗
2. H. Ohkita, S. Cook, Y. Astuti, W. Duffy, S. Tierney, W. Zhang, J. Am. Chem. Soc. 130, 3030 (2008)10.1021/ja076568q ↗
3. C. Deibel, Phys. Status Solidi A 206, 2731 (2009)10.1002/pssa.200990018 ↗
4. L.M. Chen, Z. Xu, Z. Hong, Y. Yang, J. Mater. Chem. 20, 2575 (2010)10.1039/b925382c ↗
5. A.J. Das, K.S. Narayan, Adv. Mater. 25, 2193 (2013)10.1002/adma.201204048 ↗
6. J. You, C. Chen, Z. Hong, K. Yoshimura, K. Ohya, R. Xu, S. Ye, J. Gao, G. Li, Y. Yang, Adv. Mater. 25, 3973 (2013)10.1002/adma.201300964 ↗
7. S. Günes, H. Neugebauer, N.S. Sariciftci, Chem. Rev. 107, 1324 (2007)10.1021/cr050149z ↗
8. P. Peumans, S.R. Forrest, Appl. Phys. Lett. 79, 126 (2001)10.1063/1.1384001 ↗
9. X.Z. Zhu, C.H. Gao, M.F. Xu, W. Gu, X.B. Shi, Y.L. Lei, Synth. Met. 162, 2212 (2012)10.1016/j.synthmet.2012.10.021 ↗
10. M.F. Xu, L.S. Cui, X.Z. Zhu, C.H. Gao, X.B. Shi, Z.M. Jin, Org. Electron. 14, 657 (2013)10.1016/j.orgel.2012.12.016 ↗
11. K.W. Wong, H.L. Yip, Y. Luo, K.Y. Wong, W.M. Lau, K.H. Low, Appl. Phys. Lett. 80, 2788 (2002)10.1063/1.1469220 ↗
12. V. Shrotriya, G. Li, Y. Yao, C.W. Chu, Y. Yang, Appl. Phys. Lett. 88, 073508 (2006)10.1063/1.2174093 ↗
13. J.H. Huang, D. Kekuda, C.W. Chu, K.C. Ho, J. Mater. Chem. 19, 3704 (2009)10.1039/b822729b ↗
14. Y. Kinoshita, R. Takenaka, H. Murata, Appl. Phys. Lett. 92, 243309 (2008)10.1063/1.2949321 ↗
15. Y. Liu, R. Dhakal, V. Dalal, J. Kim, Appl. Phys. Lett. 101, 233904 (2012)10.1063/1.4769896 ↗
16. D.W. Zhao, P. Liu, X.W. Sun, S.T. Tan, L. Ke, A.K.K. Kyaw, Appl. Phys. Lett. 95, 153304 (2009)10.1063/1.3250176 ↗
17. P. De Bruyn, D.J.D. Moet, P.W.M. Blom, Org. Electron. 11, 1419 (2010)10.1016/j.orgel.2010.06.002 ↗
18. Y. Sun, J.H. Seo, C.J. Takacs, J. Seifter, A.J. Heeger, Adv. Mater. 23, 679 (2011)
19. M.H. Park, J.H. Li, A. Kumar, G. Li, Y. Yang, Adv. Funct. Mater. 19, 1241 (2009)10.1002/adfm.200801639 ↗
20. J.C. Wang, W.T. Weng, M.Y. Tsai, M.K. Lee, S.F. Horng, T.P. Perng, J. Mater. Chem. 20, 862 (2010)10.1039/B921396A ↗
21. B.N. Illy, A.C. Cruickshank, S. Schumann, R. Da Campo, T.S. Jones, S. Heutz, J. Mater. Chem. 21, 12949 (2011)10.1039/c1jm11225b ↗
22. S. Chen, C.E. Small, C.M. Amb, J. Subbiah, T.H. Lai, S.W. Tsang, Adv. Energy Mater. 2, 1333 (2012)10.1002/aenm.201200184 ↗
23. S.T. Meyers, J.T. Anderson, C.M. Hung, J. Thompson, J.F. Wager, D.A. Keszler, J. Am. Chem. Soc. 130, 17603 (2008)10.1021/ja808243k ↗
24. L. Spanhel, M.A. Anderson, J. Am. Chem. Soc. 113, 2826 (1991)10.1021/ja00008a004 ↗
25. C. Pacholski, A. Kornowski, H. Weller, Angew. Chem. Int. Ed. 41, 1188 (2002)10.1002/1521-3773(20020402)41:7<1188::AID-ANIE1188>3.0.CO;2-5 ↗
26. E. Hosono, S. Fujihara, T. Kimura, H. Imai, J. Sol–Gel Sci. Tech. 29, 71 (2004)10.1023/B:JSST.0000023008.14883.1e ↗
27. L. Znaidi, Mater. Sci. Eng., B 174, 18 (2010)10.1016/j.mseb.2010.07.001 ↗
28. S. Bai, Z. Wu, X. Xu, Y. Jin, B. Sun, X. Guo, Appl. Phys. Lett. 100, 203906 (2012)10.1063/1.4719201 ↗
29. Y. Ka, E. Lee, S.Y. Park, J. Seo, D.G. Kwon, H.H. Lee, Org. Electron. 14, 100 (2013)10.1016/j.orgel.2012.10.013 ↗
30. Y. Zhang, G. Du, X. Wang, W. Li, X. Yang, Y. Ma, J. Cryst. Growth 252, 180 (2003)10.1016/S0022-0248(02)02481-8 ↗
31. X.Q. Wei, B.Y. Man, M. Liu, C.S. Xue, H.Z. Zhuang, C. Yang, Phys. B 388, 145 (2007)10.1016/j.physb.2006.05.346 ↗
32. C.J. Brabec, A. Cravino, D. Meissner, N.S. Sariciftci, T. Fromherz, M.T. Rispens, Adv. Funct. Mater. 11, 374 (2001)10.1002/1616-3028(200110)11:5<374::AID-ADFM374>3.0.CO;2-W ↗
33. Y.H. Lin, Y.T. Tsai, C.C. Wu, C.H. Tsai, C.H. Chiang, H.F. Hsu, Org. Electron. 13, 2333 (2012)10.1016/j.orgel.2012.07.023 ↗
34. J. Gmeiner, S. Karg, M. Meier, W. Rieß, P. Strohriegl, M. Schwoerer, Acta Polymer. 44, 201 (1993)10.1002/actp.1993.010440405 ↗
35. Z. Wang, Y. Lou, S. Naka, H. Okada, ACS Appl. Mater. Interfaces 3, 2496 (2011)10.1021/am2003729 ↗
36. Z. Wang Z, Y. Lou, S. Naka, H. Okada, Appl. Phys. Lett. 98, 063302 (2011)10.1063/1.3554391 ↗
37. C.H. Gao, S.D. Cai, W. Gu, D.Y. Zhou, Z.K. Wang, L.S. Liao, ACS Appl. Mater. Interfaces 4, 5211 (2012)10.1021/am3011324 ↗
38. C.H. Gao, X.Z. Zhu, L. Zhang, D.Y. Zhou, Z.K. Wang, L.S. Liao, Appl. Phys. Lett. 102, 153301 (2013)10.1063/1.4802081 ↗