Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows
Source abstract
Abstract
Wurtzite (w) and zincblende (zb) InN films have been grown on (011) SrTiO3 (STO) substrates by metal-organic chemical vapor deposition, the epitaxial relationships and optical properties are characterized by X-ray diffraction (XRD), absorption and photoluminescence (PL). Based on XRD θ–2θ and Φ scanning results, the epitaxial relationships between (w- and zb-) InN films and STO substrates are determined, that is, (0001)[1120] w-InN//(011)[100]STO and $(100)[011]_{\mathit{zb}\mbox{-}\mathrm{InN}}//(011)[100]_{\mathrm{STO}}$ . Compared with the w-InN films, the zb-InN films exhibit a red shift in absorption edge and PL spectra, and a much narrower and stronger PL spectrum, implying a better optical quality of zb-InN films. The structure transition is supposed to be due to the difference in atom and bond areal density between the crystal plane of w-InN(0001) and zb-InN(100).
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Acoustic Wave Resonator Technologies
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