Improved characteristics for MOHOS memory with oxygen-rich GdO as charge storage layer annealed by NH3
Source abstract
Abstract
Characteristics of metal–oxide–high-k–oxide–silicon (MOHOS) memories with oxygen-rich or oxygen-deficient GdO as charge storage layer annealed by NH3 or N2 are investigated. Transmission electron microscopy, X-ray photoelectron spectroscopy and X-ray diffraction are used to analyze the cross-sectional quality, composition and crystallinity, respectively, of the stacked gate dielectric with a structure of Al/Al2O3/GdO/SiO2/Si. The MOHOS capacitor with oxygen-rich GdO annealed in NH3 exhibits a good trade-off among its memory properties: large memory window (4.8 V at ±12 V, 1 s), high programming speed (2.6 V at ±12 V/100 μs), good endurance and retention properties (window degradation of 5 % after 105 program/erase cycles and charge loss of 18.6 % at 85 °C after 10 years, respectively) due to passivation of oxygen vacancies, generation of deep-level traps in the grain boundaries of the GdO layer and suppression of the interlayer between GdO and SiO2 by the NH3 annealing.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (21)
Show source-provided references
1. T.M. Pan, J.S. Jung, X.C. Wu, Appl. Phys. Lett. 96, 162901 (2010)
2. M. Fanciulli, G. Scarel, Rare Earth Oxide Thin Films: Growth, Characterization, and Applications (Springer, Berlin, 2007)10.1007/b137342 ↗
3. T. Echtermeyer, H.D.B. Gottlob, T. Wahlbrink, T. Mollenhauer, M. Schmidt, J.K. Efavi, M.C. Lemme, H. Kurz, Solid-State Electron. 51, 617 (2007)10.1016/j.sse.2007.02.008 ↗
4. J. Kwo, M. Hong, A.R. Kortan, K.T. Queeney, Y.J. Chbal, J.P. Mannaerts, T. Boone, J.J. Krajewski, A.M. Sergent, J.M. Rosamilia, Appl. Phys. Lett. 77, 130 (2000)10.1063/1.126899 ↗
5. T.M. Pan, F.H. Chen, Semicond. Sci. Technol. 26, 045004 (2011)
6. J.C. Wang, C.T. Lin, P.C. Chou, C.S. Lai, Microelectron. Reliab. 52, 635 (2012)10.1016/j.microrel.2011.09.032 ↗
7. J.C. Wang, P.C. Chou, C.S. Lai, L.C. Liu, J. Vac. Sci. Technol. B 29, 011009 (2011)
8. Y.-Y. Chen, C.-H. Chien, J.-C. Lou, Jpn. J. Appl. Phys. 44, 1704 (2005)10.1143/JJAP.44.1704 ↗
9. M.S. Akbar, S. Gopalan, H.J. Cho, K. Onishi, R. Choi, R. Nieh, C.S. Kang, Y.H. Kim, J. Han, S. Krishnan, J.C. Lee, Appl. Phys. Lett. 82, 1757 (2003)10.1063/1.1544062 ↗
10. M. Ji, L. Wang, F. Wei, H. Tu, J. Du, Semicond. Sci. Technol. 25, 075008 (2010)
11. R.J. Carter, E. Cartier, A. Kerber, L. Pantisano, T. Schram, S. De Gendt, M. Heyns, Appl. Phys. Lett. 83, 533 (2003)10.1063/1.1592639 ↗
12. K. Tse, J. Robertson, Microelectron. Eng. 84, 663 (2007)10.1016/j.mee.2006.12.009 ↗
13. T.M. Pan, J.S. Jung, X.C. Wu, Appl. Phys. Lett. 96, 162901 (2010)
14. T. Hori, H. Iwasaki, Y. Naito, H. Esaki, IEEE Trans. Electron Devices 34, 2238 (1987)10.1109/T-ED.1987.23226 ↗
15. L. Liu, J.P. Xu, F. Ji, J.X. Chen, P.T. Lai, Appl. Phys. Lett. 101, 033501 (2012)
16. P.R. Chalker, M. Werner, S. Romani, Appl. Phys. Lett. 93, 182911 (2008)10.1063/1.3023059 ↗
17. J.C. Wang, C.T. Lin, P.C. Chou, C.S. Lai, Microelectron. Reliab. 52, 635 (2012)10.1016/j.microrel.2011.09.032 ↗
18. J.C. Wang, C.T. Lin, J. Appl. Phys. 109, 064506 (2011)
19. J.L. Gavartin, D. Munoz Ramo, A.L. Shluger, G. Bersuker, B.H. Lee, Appl. Phys. Lett. 89, 082908 (2006)10.1063/1.2236466 ↗
20. C. Tang, B. Tuttle, R. Ramprasad, Phys. Rev. B 76, 073306 (2007)
21. D. Brassard, D.K. Sarkar, M.A. El Khahani, J. Vac. Sci. Technol. A 24, 600 (2006)10.1116/1.2180267 ↗