Photoluminescence characteristics of Se-doped ZnGa2O4:Mn2+ thin-film phosphors grown by pulsed laser deposition on Al2O3(0001) substrates

Se-doped ZnGa2O4:Mn2+ thin-film phosphors have been grown using a pulsed laser deposition technique at various growth conditions. Structural characterization was carried out on a series of Se-doped ZnGa2O4:Mn2+ films grown on Al2O3(0001) substrates using Zn-rich ceramic targets. The results of X-ray diffraction patterns showed that the lattice constants of the films decrease with the substitution of Se for the oxygen in the ZnGa2O4. Photoluminescence (PL) of Se-doped ZnGa2O4:Mn2+ thin films has indicated that Al2O3(0001) is a promising substrate for the growth of high-quality Se-doped ZnGa2O4:Mn2+ films. The emission spectra of Se-doped ZnGa2O4:Mn2+ films show a broad band extending from 479 to 550 nm and peaking at 508 nm. In particular, the incorporation of Se into the ZnGa2O4 lattice could induce an increase in the PL. The PL peak intensity of the Se-doped ZnGa2O4:Mn2+ films is a factor of 2.8 larger than that of the ZnGa2O4:Mn2+ films. This phosphor is promising for applications in flat-panel displays.