Fabrication of Planar Back End of Line Compatible HfO$_x$ Complementary Resistive Switches

This paper presents the fabrication, together with morphological and electrical characterizations of complementary resistive switches using the nanodamascene process. The as-fabricated devices are fully embedded in an insulating oxide, opening the way for further process steps such as three-dimensional monolithic integration. Complementary resistive switches electrical performance is consistent with resistive random access memories fabricated and characterized with the same procedure that showed R _OFF /R _ON ratios of 100. Complementary operating voltages of V _th1,3 = |0.8| V and Vt _h2.4 = |1.1| V are obtained for 88 × 22 nm ² junction with a 6 nm thick HfO _x junction.