High-magnetic field annealing effect on room-temperature ferromagnetism enhancement of un-doped HfO2 thin films
Source abstract
Abstract
Monoclinic HfO2 thin films with intrinsic defects were prepared by annealing in flowing argon. The behavior of the HfO2 films could be manipulated by applying an external magnetic field during annealing processing. Room-temperature ferromagnetism and visible photoluminescence were observed in these un-doped HfO2 films due to the involvement of oxygen vacancies. The results demonstrated that the density of oxygen vacancies in HfO2 films could be controlled by varying the intensity of the magnetic field. This study could facilitate understanding of ferromagnetism origin in un-doped oxides, also suggests an effective way to alter the intrinsic defects in HfO2 to improve its performance.
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Research context
OpenAlex topics: ZnO doping and properties · Semiconductor materials and devices · Electronic and Structural Properties of Oxides
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References (36)
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