Morphological and structural modifications induced in a-Si1−x C x :H films by excimer laser annealing
Source abstract
Abstract
Hydrogenated amorphous silicon carbon films of different carbon content deposited by plasma enhanced chemical vapour deposition on Corning glass and crystalline silicon substrates have been irradiated by an excimer (KrF) laser. The properties of these samples were investigated by X-ray diffraction, field emission scanning electron microscopy and Fourier transform infrared spectroscopy before and after laser treatment, in order to understand the role of the carbon content as well as the substrate in the structural modifications. It has been demonstrated that the changes induced in the films by the laser treatment are independent of the substrate but depend on the carbon content which facilitates the crystallization process.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence
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