Comparative investigation of unipolar resistance switching effect of Pt/Mg0.6Zn0.4O/Pt devices with different electrode patterns for nonvolatile memory application
Source abstract
Abstract
Electrically induced unipolar resistance switching effects of Mg0.6Zn0.4O thin films with two top Pt electrodes (MZO-T) and top and bottom Pt electrodes (MZO-B) were demonstrated and compared for nonvolatile memory applications. The obtained resistance ratios of high-resistance states (HRS) to low-resistance states (LRS) for MZO-B and MZO-T devices were above seven and four orders of magnitude, respectively, and exhibited a slight degradation with voltage. For both the devices, the conduction mechanisms were dominated by ohmic conduction in LRS and trap-controlled space charge limited current in HRS. Furthermore, a filamentary model was applied to explain the switching behaviors for both the devices considering the asymmetric interface defects and film thickness. The results also suggest that resistance switching behaviors can be regulated by interface defect engineering.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
Show source-provided references
1. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, Nature 453, 80 (2008)10.1038/nature06932 ↗
2. M. Janousch, G.I. Meijer, U. Staub, B. Delley, S.F. Karg, B.P. Andreasson, Adv. Mater. 19, 2232 (2007)10.1002/adma.200602915 ↗
3. H.Y. Jeong, J.Y. Lee, S.Y. Choi, Adv. Funct. Mater. 20, 3912 (2010)10.1002/adfm.201001254 ↗
4. A. Sawa, Mater. Today 6, 28 (2008)10.1016/S1369-7021(08)70119-6 ↗
5. N. Xu, L. Liu, X. Sun, X. Liu, D. Han, Y. Wang, R. Han, J. Kang, B. Yu, Appl. Phys. Lett. 92, 232112 (2008)
6. W.Y. Chang, Y.C. Lai, T.B. Wu, S.F. Wang, F. Chen, M.J. Tsai, Appl. Phys. Lett. 92, 022110 (2008)
7. M. Villafuerte, S.P. Heluani, G. Juarez, G. Simonelli, G. Braunstein, S. Duhalde, Appl. Phys. Lett. 90, 052105 (2007)10.1063/1.2437688 ↗
8. X.M. Chen, G.H. Wu, D.H. Bao, Appl. Phys. Lett. 93, 093501 (2008)
9. X.M. Chen, G.H. Wu, P. Jiang, W.F. Liu, D.H. Bao, Appl. Phys. Lett. 94, 033501 (2009)
10. Ü. Özgür, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doğan, V. Avrutin, S.J. Cho, H. Morkoc, J. Appl. Phys. 98, 041301 (2005)10.1063/1.1992666 ↗
11. M. Menon, J.W. Bullard, J. Mater. Chem. 9, 949 (1999)10.1039/a809647c ↗
12. J.W. Bullard, Z. Xu, M. Menon, J. Cryst. Growth 233, 389 (2001)10.1016/S0022-0248(01)01573-1 ↗
13. A. Rose, Phys. Rev. 97, 1538 (1955)10.1103/PhysRev.97.1538 ↗
14. J.Y. Son, Y.H. Shin, Appl. Phys. Lett. 92, 222106 (2008)
15. K.M. Kim, B.J. Choi, Y.C. Shin, S. Choi, C.S. Huang, Appl. Phys. Lett. 91, 012907 (2007)
16. R. Waser, M. Aono, Nat. Mater. 6, 833 (2007)10.1038/nmat2023 ↗
17. X.M. Chen, H. Zhou, G.H. Wu, D.H. Bao, Appl. Phys. A 104, 477 (2010)10.1007/s00339-011-6290-7 ↗
18. Y.C. Yang, F. Pan, Q. Liu, M. Liu, F. Zeng, Nano Lett. 9, 1636 (2009)10.1021/nl900006g ↗
19. S. Peng, F. Zhuge, X. Chen, X. Zhu, B. Hu, L. Pan, B. Chen, R. Li, Appl. Phys. Lett. 100, 072101 (2012)
20. A. Travlos, N. Boukos, C. Chandrinou, H.S. Kwack, L.S. Dang, J. Appl. Phys. 106, 104307 (2009)10.1063/1.3259413 ↗
21. F. Zhang, X.M. Li, X.D. Gao, L. Wu, X. Cao, X.J. Liu, R. Yang, J. Appl. Phys. 109, 104504 (2011)
22. K.M. Kim, B.J. Choi, Y.C. Shin, S. Choi, C.S. Hwang, Appl. Phys. Lett. 91, 012907 (2007)
23. Y.H. Kang, J.H. Choi, T.I. Lee, W. Lee, J.M. Myoung, Solid State Commun. 151, 1739 (2011)10.1016/j.ssc.2011.08.036 ↗
24. Y.S. Shen, B.S. Chiou, C.C. Ho, Thin Solid Films 517, 1209 (2008)10.1016/j.tsf.2008.06.034 ↗
25. X. Gu, Y. Lin, I.I. Oleynik, C.T. White, AIP Conf. Proc. 1195, 793 (2009)10.1063/1.3295260 ↗
26. Y. Shuai, S. Zhou, D. Burger, M. Helm, H. Schmidt, J. Appl. Phys. 109, 124117 (2011)