Investigation of growth behavior and properties of Si nanowires grown at various supply times of Ar gas current
Source abstract
Abstract
Silicon nanowires (SiNWs) were synthesized on gold-coated silicon substrates by a very high frequency plasma enhanced chemical vapor deposition technique. The influence of supply time of Ar gas current on morphology, microstructure and optical properties of the SiNWs was investigated by means of field emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction and photoluminescence. The lengths and density of the SiNWs decrease with an increase in the supply time of flowing Ar gas. The results revealed that the morphologies of the SiNWs strongly depended on the time of flowing Ar gas.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Semiconductor materials and interfaces · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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