Identification of about 100-meV acceptor level in ZnO nanostructures by photoluminescence
Source abstract
Abstract
ZnO nanorod arrays and nanowires were grown by hydrothermal and vapor phase deposition methods, respectively. At low temperature, the photoluminescence (PL) spectra of both samples are dominated by a broad peak around 3.34 eV. Combined with excitation density-dependent PL spectra and surface passivation process, it is indicated from temperature-dependent PL results that the 3.34 eV emission could be attributed to free electron-to-neutral acceptor transitions. The acceptor level is estimated to be ∼100 meV.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Quantum Dots Synthesis And Properties
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References (26)
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