Magnetoresistance in a nominally undoped InGaN thin film

K. Ding; Y. P. Zeng; Y. Y. Li; L. J. Cui; J. X. Wang; H. X. Lu; P. P. Cong

doi:10.1007/s00339-009-5497-3

journal article·2010-04

Magnetoresistance in a nominally undoped InGaN thin film

K. Ding, Y. P. Zeng, Y. Y. Li, L. J. Cui, J. X. Wang, H. X. Lu, P. P. Cong

Applied Physics A· Volume 99· Issue 1

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Source abstract

Abstract

The magnetotransport properties of a nominally undoped InGaN thin film grown by metal-organic chemical vapor deposition were investigated. Resistivity was measured under a magnetic field up to 5 T over the temperature range of 3 to 298 K. The film exhibits a negative magnetoresistance at low temperatures. Its magnitude decreases with increasing temperature, and turns to be positive for temperatures above 100 K. The negative component was described by a model proposed by Khosla and Fischer for spin scattering of carriers in an impurity band. The positive part was attributed to the effect of Lorentz force on the carrier motion. Agreement between the model and the data is presented.

Source: openaire · Quality: candidate unverified · Source record ↗

Research context

Materials processing

OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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