Investigation of band offset at PEDOT: PSS/GaN interface
Source abstract
Abstract
In the present report, the interfacial band offset was investigated in poly (styrenesulfonate) doped poly (3,4-ethylenedioxythiophene) (PEDOT: PSS) and Gallium Nitride (i.e., PEDOT:PSS/GaN) heterojunction using X-ray photoemission studies. A hetero-interface of PEDOT: PSS with molecular beam epitaxy grown GaN surface has been developed, and the changes in morphology and interfacial electronic structure were analyzed. It was observed that the deposition of PEDOT: PSS on GaN pursued uniform coverage and led to a significant reduction in surface roughness from 4.47 to 1.86 nm. Further, the photoemission analysis performed to analysis the band offset in the developed organic/ inorganic hetero-interface revealed a Type-I band alignment with a valence band offset of 1.6 eV.
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Research context
OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
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