DataVXIEEE Transactions on NanotechnologyPaper
journal article·2011-03

Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET

Vita Pi-Ho Hu, Yu-Sheng Wu, Pin Su

IEEE Transactions on Nanotechnology· Volume 10· Issue 2
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Source abstract

Abstract

This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poisson's equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length ( L g ) to channel thickness ( T ch ) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness ( T BI ) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined.
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Research context

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis

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