Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers
Source abstract
Abstract
The influence of chip layout and architecture on the pattern dependency of selective epitaxy of B-doped SiGe layers has been studied. The variations of Ge-, B-content, and growth rate have been investigated locally within a wafer and globally from wafer to wafer. The results are described by the gas depletion theory. Methods to control the variation of layer profile are suggested.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. 10.1109/TED.2005.85061310.1109/TED.2005.850613 ↗
2. 10.1109/IEDM.2000.90435010.1109/IEDM.2000.904350 ↗
3. growth of high quality epitaxial sigec layers by using chemical vapour deposition
4. 10.1063/1.35420010.1063/1.354200 ↗
5. 10.1007/s10854-007-9121-z10.1007/s10854-007-9121-z ↗
6. 10.1116/1.58937410.1116/1.589374 ↗
7. 10.1016/0921-5107(94)90004-310.1016/0921-5107(94)90004-3 ↗
8. epitaxy and applications of si-based heterostructures10.1557/PROC-533-315 ↗
9. a 90 nm high volume manufacturing logic technology featuring novel 45 nm gate length strained silicon cmos transistors
10. 10.1016/j.apsusc.2003.08.02410.1016/j.apsusc.2003.08.024 ↗
11. 10.1109/TED.2004.83664810.1109/TED.2004.836648 ↗