Research on the surface morphology of Al x Ga1−x As in molecular beam epitaxy
Source abstract
Abstract
The influence of deposition of aluminum on adatoms diffusion and evaporation during the growth of AlGaAs alloy layer on GaAs (001) surface is investigated. The real space scanning tunneling microscopy (STM) images showed the obvious changes on different AlGaAs surface morphology; reflection high-energy electron diffraction (RHEED) is also used to estimate the deposition. STM images and RHEED patterns showed the pits coverage and roughness of deposition surfaces caused by stronger Al–As bonds and slower surface migration rate of aluminum; Ehrlich–Schwoebel potential is considered as possible explanation of steps forming on the surface morphology. A conjecture for the formation of surfaces morphology and its influence on subsequent growth is proposed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ion-surface interactions and analysis · Electron and X-Ray Spectroscopy Techniques · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
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