Low-Leakage TiO$_{\bf 2}$ Nanowire Dielectric MOS Device Using Ag Schottky Gate Contact

We have demonstrated the advantage of using a Schottky gate contact and TiO ₂ nanowire (NW) high- k dielectric in MOS device and silver as the gate electrode. The glancing angle deposited TiO ₂ NW when used as the gate dielectric over the thin film (TF) significantly improved the electrical characteristics in terms of low Dit (4.17 × 10 ¹⁰ cm ^-2 ·eV ^-1 ) and low leakage current (8.8 × 10 ^-7 A/cm ² ) at +1 V bias.