journal article·2008-05

A $\hbox{TiSi}2/\hbox{Si}$ Heteronanocrystal Memory Operated With Hot Carrier Injections

Yan Zhu, Jianlin Liu

Publisher page

Abstract

The programming and erasing of a $\hbox{TiSi}2/\hbox{Si}$ heteronanocrystal memory were carried out by channel hot electron injection and drain side hot hole injection, respectively. Compared to an Si nanocrystal memory, a $\hbox{TiSi}2/\hbox{Si}$ heteronanocrystal memory exhibits much better writing/erasing efficiency and higher writing/erasing saturation level. The retention transient process indicates that the $\hbox{TiSi}2/\hbox{Si}$ heteronanocrystal memory has a very slow charge loss mechanism. The result of the localization of charge shows that a reverse read leads to a higher threshold voltage shift, which is almost not dependent on the amplitude of the read voltages.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Semiconductor materials and devices · Advanced Memory and Neural Computing · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (18)

Show source-provided references
1. 10.1109/TED.2006.87119010.1109/TED.2006.871190 ↗
2. 10.1016/j.sse.2004.03.02110.1016/j.sse.2004.03.021 ↗
3. 10.1063/1.36834610.1063/1.368346 ↗
4. 10.1063/1.175702210.1063/1.1757022 ↗
5. mos memory using germanium nanocrystals formed by thermal oxidation of
6. 10.1063/1.37220010.1063/1.372200 ↗
7. 10.1063/1.218381510.1063/1.2183815 ↗
8. 10.1063/1.240223210.1063/1.2402232 ↗
9. 10.1109/TED.2006.88567710.1109/TED.2006.885677 ↗
10. 10.1063/1.138519010.1063/1.1385190 ↗
11. 10.1109/LED.2004.82516310.1109/LED.2004.825163 ↗
12. 10.1063/1.158837310.1063/1.1588373 ↗
13. a 6v embedded 90 nm silicon nanocrystal nonvolatile memory
14. 10.1109/IEDM.2003.126934310.1109/IEDM.2003.1269343 ↗
15. operational and reliability comparison of discrete-storage nonvolatile memories: advantages of single- and double-layer metal nanocrystals
16. novel multi-bit sonos type flash memory using a high-k charge trapping layer
17. finfet sonos flash memory for embedded applications
18. 10.1143/JJAP.45.63810.1143/JJAP.45.638 ↗