Sintering of Copper Particles for Die Attach
Source abstract
Abstract
First steps are taken toward a low-cost alternative to silver sintering as a highly reliable die attach technology for deep drilling applications and future power electronic modules. In this feasibility analysis, we evaluate sintering of copper particles for die attach. Particulate copper pastes are pretreated in H 2 atmosphere (50 mbar) in order to gain oxide-free particles. Subsequently, particles are sintered at a pressure of 40 N/mm 2 and a temperature of 350°C for 2 min. Porosity, Young's modulus as well as electrical and thermal conductivities of sintered layers are analyzed. Moreover, shear tests at ambient temperature are performed for evaluating the adhesion of monometallic as well as Cu-Au bonds according to the American military standard for chip-substrate contacts (MIL-STD-883H, method 2019.8).
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Electronic Packaging and Soldering Technologies · 3D IC and TSV technologies · Electrical Contact Performance and Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
Show source-provided references
1. Test method standard microcircuits · 2010
2. 10.1109/TCAPT.2009.201587410.1109/TCAPT.2009.2015874 ↗
3. 10.1109/TCPMT.2010.210337810.1109/TCPMT.2010.2103378 ↗
4. 10.1007/s11664-011-1750-610.1007/s11664-011-1750-6 ↗
5. Low-pressure sintering of silver micro- and nanoparticles for a high temperature stable pick & place die attach
6. Swelling phenomena in sintered silver die attach structures at high temperatures: Reliability problems and solutions for an operation above 350$\circ{\rm C}$
7. 10.1109/TCAPT.2009.203163110.1109/TCAPT.2009.2031631 ↗
8. 10.1109/ESIME.2007.36006610.1109/ESIME.2007.360066 ↗
9. 10.1016/S0167-577X(03)00252-010.1016/S0167-577X(03)00252-0 ↗
10. New assembly and interconnects beyond sintering method
11. Copper Price in Gold and Silver · 2010
12. 10.1109/TADVP.2007.89862810.1109/TADVP.2007.898628 ↗
13. thoben · Zuverlssigkeit von groflchigen verbindungen in der leistungselektronik · 2002
14. mertens · Die Niedertemperatur-Verbindungstechnik der Leistungselektronik · 2004
15. schroeder · Semiconductor Material and Device Characterization · 2006 · 1
16. 10.1109/TCPMT.2011.216715410.1109/TCPMT.2011.2167154 ↗
17. 10.1016/j.matdes.2009.04.00610.1016/j.matdes.2009.04.006 ↗
18. 10.1007/s11664-009-0942-910.1007/s11664-009-0942-9 ↗
19. Migration of sintered nanosilver die-attach material on alumina substrates at high temperature
20. 10.1109/TEPM.2007.89915810.1109/TEPM.2007.899158 ↗
21. 10.1109/TCPMT.2011.217057110.1109/TCPMT.2011.2170571 ↗
22. 10.1109/28.6753610.1109/28.67536 ↗
23. 10.1109/EPTC.2010.570260510.1109/EPTC.2010.5702605 ↗
24. 10.1109/IPFA.1995.48762610.1109/IPFA.1995.487626 ↗
25. 10.1016/S1359-6462(01)00764-310.1016/S1359-6462(01)00764-3 ↗
26. Synthesis and sintering of ${\rm Cu}\hbox{-}{\rm Al}2{\rm O}3$ nanocomposite powders produced by a thermochemical route
27. schatt · Werkstoffwissenschaft · 1996
28. 10.1021/ja030167310.1021/ja0301673 ↗
29. 10.1002/mawe.1978009011010.1002/mawe.19780090110 ↗
30. 10.1007/s11664-005-0151-010.1007/s11664-005-0151-0 ↗