A TSV-Based 3-D Electromagnetic Bandgap Structure on an Interposer for Noise Suppression

For efficient and broadband noise suppression in grid-type power distribution networks (PDNs), a novel TSV-based 3-D electromagnetic bandgap (EBG) structure with an accurate and fast circuit model for predesign is proposed for the first time. The proposed structure is suitable for a silicon interposer-based system-in-package (SIP) for small size, high-density RF applications with the development of various portable terminals or other small devices. It is divided into a 3-D capacitor and a 3-D inductor, which are composed of TSVs and redistribution layers (RDLs). Profiting from the high-density integration of TSV devices, the proposed EBG can overcome the shortcomings of the existing structures, such as narrow bandgaps, large areas, and incompatibility with grid-type PDNs. The new structure effectively suppresses the simultaneous switching noise (SSN) in the interposer generated by chips or other modules. The EBG structure produces a noise suppression bandwidth (below −40 dB) of 13.22 GHz, ranging from 6.69 to 19.91 GHz with a fractional bandwidth (FBW) of 166.9%. Moreover, based on the equivalent circuit model, the bandgap of the proposed EBG can be adjusted by changing the structure parameters for diverse noise scenarios. Subsequently, to further reduce the device size, the EBG isolation wall is designed, and high performance is observed.