Using Hybrid Bonding for Stacked Bi-Color Micro-Light-Emitting Diodes
Source abstract
Abstract
In this work, A vertically stacked bi-color micro-light-emitting diode (Micro-LED) array structure employing Au-Sn hybrid bonding technology is presented in this work. The design integrates blue flip-chip and green vertical Micro-LEDs into a common cathode circuit configuration, achieving an ultra-fine pixel pitch of 5 μm across a 343 × 387 array on a 1.6 cm² substrate. Precise hybrid bonding was performed at 233°C for 30 minutes, enabling effective Au-Sn alloy formation. The structure’s performance was verified through electrical character and cross-sectional SEM-EDX analysis, demonstrating minimal voltage increase post-bonding and confirming the feasibility of independent control for both colors. This integration approach provides a scalable solution for high-resolution, compact, and low power consumption Micro-LEDs display applications, particularly suited for near-eye devices such as augmented and virtual reality systems.
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Research context
OpenAlex topics: Semiconductor Lasers and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Mechanical Engineering, National Central University, Jhongli, Taoyuan, Taiwan
Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan
Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan
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