journal article·2024-06Open access

Extending Copper Interconnects and Epoxy Dielectrics to Multi-GHz Frequencies

Junghyun Park, Jiayou Xu, Anthony Engler, Jaimal Williamson, Varughese Mathew, Sunggook Park, John C. Flake

Abstract

Future multichip packages require Die-to-Die (D2D) interconnects operating at frequencies above 10 GHz; however, the extension of copper interconnects and epoxy dielectrics presents a trade-off between performance and reliability. This paper explores insertion losses and adhesion as a function of interface roughness at frequencies up to 18 GHz. We probe epoxy surface chemistry as a function of curing time and use wet etching to modulate surface roughness. The morphology is quantified by atomic force microscopy (AFM) and two-dimensional fast Fourier transform (2D FFT). Peel test and vector network analysis are used to examine the impacts of both type and level of roughness. The trade-offs between power efficiency and reliability are presented and discussed.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Electronic Packaging and Soldering Technologies · 3D IC and TSV technologies · Adhesion, Friction, and Surface Interactions

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Gordon A. and Mary Cain Department of Chemical Engineering, Louisiana State University, Baton Rouge, LA, USA

Texas Instruments Incorporated, Dallas, TX, USA

NXP Semiconductors, Austin, TX, USA

Department of Mechanical and Industrial Engineering and the Center for Bio-Modular Multiscale Systems, Louisiana State University, Baton Rouge, LA, USA

Funding

Semiconductor Research Corporation · National Institutes of Health

References (57)

Show source-provided references
1. 10.1109/TCPMT.2019.294270810.1109/TCPMT.2019.2942708 ↗
2. 10.1145/2818950.281895110.1145/2818950.2818951 ↗
3. 10.1109/ECTC.2018.0009910.1109/ECTC.2018.00099 ↗
4. 10.1016/j.sse.2020.10792810.1016/j.sse.2020.107928 ↗
5. 10.1109/ICSPCom.2016.798055710.1109/ICSPCom.2016.7980557 ↗
6. 10.1109/MMM.2019.294513910.1109/MMM.2019.2945139 ↗
7. 10.1109/TMTT.2019.295693410.1109/TMTT.2019.2956934 ↗
8. 10.1109/ECTC.2018.0022610.1109/ECTC.2018.00226 ↗
9. 10.1109/CICC48029.2020.907590110.1109/CICC48029.2020.9075901 ↗
10. 10.1109/TCPMT.2022.314446110.1109/TCPMT.2022.3144461 ↗
11. 10.23919/PanPacific48324.2020.905934710.23919/PanPacific48324.2020.9059347 ↗
12. 10.1109/EPTC.2017.827746410.1109/EPTC.2017.8277464 ↗
13. 10.1145/3352460.335830210.1145/3352460.3358302 ↗
14. 10.1109/ECTC.2016.20110.1109/ECTC.2016.201 ↗
15. 10.1109/ICCE-TW.2015.721681810.1109/ICCE-TW.2015.7216818 ↗
16. 10.1016/j.apsusc.2015.06.11410.1016/j.apsusc.2015.06.114 ↗
17. 10.1109/EPTC.2015.741229210.1109/EPTC.2015.7412292 ↗
18. 10.1016/j.matdes.2015.07.10410.1016/j.matdes.2015.07.104 ↗
19. Hayden · 2008
20. 10.4028/www.scientific.net/amm.457-458.120810.4028/www.scientific.net/amm.457-458.1208 ↗
21. 10.1109/TMTT.2017.269519210.1109/TMTT.2017.2695192 ↗
22. 10.1109/VLSIC.2002.101504310.1109/VLSIC.2002.1015043 ↗
23. 10.1109/TMTT.2015.250444310.1109/TMTT.2015.2504443 ↗
24. 10.1109/TCPMT.2011.217904510.1109/TCPMT.2011.2179045 ↗
25. Park · 2008
26. 10.1109/TADVP.2007.90156710.1109/TADVP.2007.901567 ↗
27. Impact of copper surface texture on loss: A model that works
28. Impact of copper surface texture on loss: A model that works
29. 10.1109/TADVP.2009.201727410.1109/TADVP.2009.2017274 ↗
30. 10.1149/1.195272710.1149/1.1952727 ↗
31. 10.1021/acsaelm.9b0029010.1021/acsaelm.9b00290 ↗
32. 10.1016/j.jiec.2016.10.03110.1016/j.jiec.2016.10.031 ↗
33. Effect of conductor profile on the insertion loss, phase constant, and dispersion in thin high frequency transmission lines
34. 10.1590/S0103-5053200600030001610.1590/S0103-50532006000300016 ↗
35. 10.1149/1.279446110.1149/1.2794461 ↗
36. 10.3390/molecules2311273910.3390/molecules23112739 ↗
37. 10.1016/S0040-6090(00)01567-410.1016/S0040-6090(00)01567-4 ↗
38. 10.1177/146442071771992010.1177/1464420717719920 ↗
39. 10.1016/j.jelechem.2014.08.01910.1016/j.jelechem.2014.08.019 ↗
40. 10.1088/0960-1317/16/11/N0210.1088/0960-1317/16/11/N02 ↗
41. Rathsack · 2001
42. 10.1016/j.jmatprotec.2005.04.02410.1016/j.jmatprotec.2005.04.024 ↗
43. 2002
44. 10.1007/978-1-4899-2073-710.1007/978-1-4899-2073-7 ↗
45. 10.1021/acs.jpcc.9b0777210.1021/acs.jpcc.9b07772 ↗
46. 10.3390/nano1305091110.3390/nano13050911 ↗
47. 10.1016/S0040-6090(03)00851-410.1016/S0040-6090(03)00851-4 ↗
48. 10.1163/156856111X62310410.1163/156856111X623104 ↗
49. 10.1021/ja00170a01610.1021/ja00170a016 ↗
50. 10.1109/TCPMT.2017.277425210.1109/TCPMT.2017.2774252 ↗
51. 10.1016/S0026-2692(02)00105-210.1016/S0026-2692(02)00105-2 ↗
52. 10.1016/j.apsusc.2004.01.01010.1016/j.apsusc.2004.01.010 ↗
53. 10.1016/j.tsf.2005.08.35510.1016/j.tsf.2005.08.355 ↗
54. 10.1080/0021846900803018510.1080/00218469008030185 ↗
55. 10.1109/MWSYM.1980.112430310.1109/MWSYM.1980.1124303 ↗
56. 2014
57. 10.1109/PROC.1964.304710.1109/PROC.1964.3047 ↗