Modeling and Characterization of Differential Multibit Carbon-Nanotube Through-Silicon Vias
Source abstract
Abstract
By the virtue of multibit through-silicon via (TSV), which consists of carbon-nanotube (CNT)-filled TSV with separate metal pads, design of compact differential multibit CNT TSVs (DMC-TSVs) is proposed and studied. For modeling such DMC-TSVs, an equivalent circuit model is introduced, in which the partial-element equivalent circuit (PEEC) method is adopted to extract the impedance. Moreover, the circuit model is simplified as an odd-mode half-circuit and is used to design passive resistor-inductor (RL) equalizer.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 3D IC and TSV technologies · Semiconductor materials and devices · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
Show source-provided references
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