Influence of Packaging Processes and Temperature on Characteristics of Schottky Diodes Made of SiC

In this paper, findings concerning laboratory structures of Schottky diodes made of silicon carbide are presented. Special attention is paid to the influence of the mounting process of diode structures in packages worked out at the Warsaw University of Technology, Warsaw, Poland, and influence of the ambient temperature and self-heating phenomena on the dc characteristics of the examined diodes. It is shown that high-temperature technological operations can influence the course of characteristics of these diodes and that the self-heating phenomena can visibly change the shape of characteristics of the considered devices. Thermal parameters of these diodes are also measured. The performed measurements prove that constructions of the packages performed by the authors allow the considered diodes to operate at internal temperatures exceeding even 350 °C.