Simulation of the Dynamic Process and Quality-Influencing Mechanisms in Wafer-to-Wafer Hybrid Bonding
Source abstract
Abstract
Hybrid wafer bonding is a key technology for enabling fine-pitch 3D integration, yet its quality remains highly sensitive to wafer warpage and misalignment. This study develops a 3D finite element model that captures bonding dynamics by integrating multiple physical effects. Simulation results reveal that the bonding gap and the timing of vacuum release critically influence bonding wave propagation and void formation. Reliability analysis shows a strong linear correlation between initial warpage, post-bonding deformation, and bump misalignment. Based on the linear influence of initial warpage, wafer warpage mitigation strategies are proposed, in which deformable vacuum chucks are more effective than stress-engineered films. The proposed framework offers a practical tool for improving bonding yield in 3D integration processes.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 3D IC and TSV technologies · Electronic Packaging and Soldering Technologies · Interconnection Networks and Systems
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Integrated Circuits, Wuhan University, Wuhan, China
School of Electronic Science and Technology, Hainan University, Haikou, China
School of Power and Mechanical Engineering, Wuhan University, Wuhan, China
Institute of Co-Design for Chip Manufacturing, Wuhan, China
Funding
Major Program (JD) of Hubei Province · Wuhan Municipal Science and Technology Innovation Bureau · National Key Research and Development Program of China · National Natural Science Foundation of China · in part by Hubei Province Science and Technology Innovation Talent Program · Wuhan Science and Technology Plan Project
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