High-Stable-Efficiency Tandem Thin-Film Silicon Solar Cell With Low-Refractive-Index Silicon-Oxide Interlayer
Source abstract
Abstract
We report the recent advances and key requirements for high-efficiency “micromorph” tandem thin-film silicon solar cells composed of an amorphous silicon top cell and a microcrystalline silicon bottom cell. The impact of inserting a low-refractive-index silicon-oxide (SiO x ) film as intermediate reflecting layer (IRL) is highlighted. We show that refractive indexes as low as 1.75 can be obtained for layers still conducting enough to be implemented in solar cells, and without no additional degradation. This allows for high top-cell current densities with thin top cells, enabling low degradation rates. A micromorph cell with a certified efficiency of 12.63% (short-circuit current density of 12.8 mA/cm 2 ) is obtained for an optimized stack. Furthermore, short-circuit current densities as high as 15.9 mA/cm 2 are reported in the amorphous silicon top-cell of micromorph devices by combining a 150-nm-thick SiO x -based IRL and a textured antireflecting coating at the air-glass interface.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (47)
Show source-provided references
1. 10.1002/pip.239810.1002/pip.2398 ↗
2. bugnon · High-quality microcrystalline silicon for efficient thin-film solar cells Insights into plasma and material properties · 2013
3. 10.1557/opl.2013.74510.1557/opl.2013.745 ↗
4. Optical layers for thin-film silicon solar cells
5. 10.1016/j.solmat.2013.03.04010.1016/j.solmat.2013.03.040 ↗
6. 10.1016/j.solmat.2013.07.01210.1016/j.solmat.2013.07.012 ↗
7. A new R&D PECVD cluster system for the fabrication of high-efficiency thin-film and heterojunction silicon solar cells
8. 10.1002/adfm.20120354110.1002/adfm.201203541 ↗
9. 10.1016/j.solmat.2006.06.00310.1016/j.solmat.2006.06.003 ↗
10. 10.1109/JPHOTOV.2012.222168310.1109/JPHOTOV.2012.2221683 ↗
11. 10.1016/j.solmat.2013.06.04310.1016/j.solmat.2013.06.043 ↗
12. 10.1016/j.solmat.2011.10.03110.1016/j.solmat.2011.10.031 ↗
13. 10.1016/j.solmat.2006.06.00210.1016/j.solmat.2006.06.002 ↗
14. 10.1155/2013/31409710.1155/2013/314097 ↗
15. 10.1016/j.solmat.2013.05.04610.1016/j.solmat.2013.05.046 ↗
16. 10.1109/WCPEC.1994.52055310.1109/WCPEC.1994.520553 ↗
17. Reference cells in WPVS design for precise micromorph PV power measurements
18. 10.1016/S0927-0248(00)00193-810.1016/S0927-0248(00)00193-8 ↗
19. TCO and light trapping in silicon thin film solar cells10.1016/j.solener.2004.03.015 ↗
20. 10.1021/nl203909u10.1021/nl203909u ↗
21. 10.1364/OE.18.00A33510.1364/OE.18.00A335 ↗
22. 10.1063/1.323223010.1063/1.3232230 ↗
23. 10.1016/j.solmat.2013.05.05610.1016/j.solmat.2013.05.056 ↗
24. 10.1364/OE.17.00843910.1364/OE.17.008439 ↗
25. 10.1063/1.482481310.1063/1.4824813 ↗
26. 10.1143/JJAP.33.L175110.1143/JJAP.33.L1751 ↗
27. Photonic crystal intermediate reflectors for micromorph solar cells: A comparative study10.1364/OE.18.004478 ↗
28. 10.1016/S0927-0248(97)00173-610.1016/S0927-0248(97)00173-6 ↗
29. 10.1016/j.solmat.2013.05.03310.1016/j.solmat.2013.05.033 ↗
30. 10.1063/1.363806810.1063/1.3638068 ↗
31. High-efficiency amorphous silicon devices on LPCVD-ZNO TCO prepared in industrial KAITM-M R&D reactor
32. 10.1016/j.solmat.2013.04.01610.1016/j.solmat.2013.04.016 ↗
33. 10.1063/1.8967410.1063/1.89674 ↗
34. 10.1002/pip.245210.1002/pip.2452 ↗
35. 10.1063/1.271555410.1063/1.2715554 ↗
36. 10.1016/j.jnoncrysol.2004.02.02110.1016/j.jnoncrysol.2004.02.021 ↗
37. 10.1002/pip.116810.1002/pip.1168 ↗
38. 10.1016/j.solener.2004.08.02810.1016/j.solener.2004.08.028 ↗
39. 10.1063/1.475829510.1063/1.4758295 ↗
40. 3-dimensional optical model for thin film silicon solar cells
41. 10.1063/1.279442310.1063/1.2794423 ↗
42. 10.1002/pip.224910.1002/pip.2249 ↗
43. The icromorphsolar cell: extending a-si: H technology towards thin film crystalline silicon
44. 10.1143/JJAP.42.L90110.1143/JJAP.42.L901 ↗
45. 10.1016/j.solmat.2013.05.03010.1016/j.solmat.2013.05.030 ↗
46. 10.1143/JJAP.37.L111610.1143/JJAP.37.L1116 ↗
47. 10.1063/1.359220810.1063/1.3592208 ↗