Interfaces of Zinc Phosphide Magnesium Schottky Diodes

We report on the microanalysis of interfacial diffusion in zinc phosphide (Zn ₃ P ₂ ) Schottky diodes. The Zn ₃ P ₂ layers were grown by close-space sublimation on Ag-coated borosilicate glass substrates. The Schottky diodes were formed by depositing Mg layers directly on the Zn ₃ P ₂ and thermally annealing the stack. Microanalysis revealed interdiffusion of Mg and Zn at the Zn ₃ P ₂ /Mg interface, as well as significant diffusion of Zn into the Ag back electrode layer. Such interfacial diffusion is expected to affect the electronic properties of the Zn ₃ P ₂ layers and, therefore, the diode properties.