Top electrode-dependent resistance switching behaviors of lanthanum-doped ZnO film memory devices
Source abstract
Abstract
Lanthanum-doped ZnO (Zn0.99La0.01O) polycrystalline thin films were deposited on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. Metal/La-doped ZnO/Pt sandwich structures were constructed by depositing different top electrodes (Ag and Pt). Unipolar switching and bipolar switching characteristics were investigated in Pt/La-doped ZnO/Pt and Ag/La-doped ZnO/Pt structures, respectively. Compared with the undoped devices (Pt/ZnO/Pt and Ag/ZnO/Pt), the La-doped devices exhibits superior resistive switching performances, such as narrow distribution of the resistive switching properties (R ON, R OFF, V Set, and V Reset), higher R OFF/R ON ratio and sharp switching transition.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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