Improved phase change behavior of Sb3Te material by ZnSb doping for phase change memory
Source abstract
Abstract
The crystallization characteristic, electrical, and optical properties of ZnSb-doped Sb3Te thin films have been systematically investigated. The results show that the crystalline phase, grain size, and the preferred orientation are influenced by ZnSb addition. Meanwhile, ZnSb doping can effectively increase the thermal stability of Sb3Te films such as crystallization temperature and crystallization activation energy, and maintain fast crystallization speed. Among ZnSb-doped Sb3Te films, Zn5.3Sb72.7Te22.0 film exhibits both shorter complete crystallization time (135 ns at 70 mW) and appropriate thermal stability (keeping the amorphous state at 107.2 °C for 10 years).
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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