ZrO2 films deposited by photo-CVD at low temperatures
Source abstract
Abstract
Zirconium oxide layers have been successfully deposited by photo-CVD at low temperatures. ZrO2 growth was observed at temperatures as low as 100 °C. When deposited at 250 °C and above, these films exhibited a polycrystalline structure with a mixture of different crystal phases. Deposition at 300 °C was found to form moisture-free ZrO2 films with a high refractive index of 2.1, a very low effective density of trapped electrons of ∼8.8×108 cm-2 and an interface trap density of 6.6×109 cm-2 eV-1 being readily obtained.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · Electron and X-Ray Spectroscopy Techniques
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